Product comparison · 2 internal solid state drives

Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G vs Samsung 990 SSD PCIe

Add a product
  • 18specifications compared
  • 12differ
  • 6identical
  • 25known for one product only

Key differences

The Samsung 990 SSD PCIe has 1 TB more SSD capacity than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G (2 TB vs 1 TB). The Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G has 150 MB/s more read speed than the Samsung 990 SSD PCIe (7400 MB/s vs 7250 MB/s). The Samsung 990 SSD PCIe has 150 MB/s more write speed than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G (6450 MB/s vs 6300 MB/s). Only the Samsung 990 SSD PCIe has hardware encryption. Component for: PC/Notebook/Game console on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G, PC on the Samsung 990 SSD PCIe.

  • SSD capacity
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:1 TB
    • 990 SSD PCIe:2 TB
  • Component for
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:PC/Notebook/Game console
    • 990 SSD PCIe:PC
  • Hardware encryption
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:No
    • 990 SSD PCIe:Yes
  • Read speed
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:7400 MB/s
    • 990 SSD PCIe:7250 MB/s
  • Write speed
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:6300 MB/s
    • 990 SSD PCIe:6450 MB/s
  • Random read (4KB)
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:670000 IOPS
    • 990 SSD PCIe:850000 IOPS
  • Random write (4KB)
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:980000 IOPS
    • 990 SSD PCIe:1200000 IOPS
  • Power consumption (read)
    • 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0BW and K01TBM2SP0-25G:5 W
    • 990 SSD PCIe:4.3 W

Side by side

Differences highlightedShow differences only (off)
Comparison of MZ-V9P1T0BW-IN, 990
43 specifications
B

Samsung

990 SSD PCIe

Model 990

View product
Features7 differ
SSD capacityDiffers1 TB2 TB
SSD form factorM.2M.2
InterfacePCI Express 4.0PCI Express 4.0
NVMeYesYes
NVMe versionKnown for oneUnknown — not stated by the source2.0
Memory typeKnown for oneUnknown — not stated by the sourceV-NAND
Component forDiffersPC/Notebook/Game consolePC
Hardware encryptionDiffersNoYes
Security algorithmsKnown for oneUnknown — not stated by the source256-bit AES, TCG Opal 2.0
M.2 SSD sizeKnown for oneUnknown — not stated by the source2280 (22 x 80 mm)
Read speedDiffers7400 MB/s7250 MB/s
Write speedDiffers6300 MB/s6450 MB/s
Random read (4KB)Differs670000 IOPS850000 IOPS
Random write (4KB)Differs980000 IOPS1200000 IOPS
PCI Express interface data lanesKnown for oneUnknown — not stated by the sourcex4
DevSlp (device sleep) supportKnown for oneUnknown — not stated by the sourceYes
PCI Express CEM revisionKnown for oneUnknown — not stated by the source4.0
S.M.A.R.T. supportYesYes
TRIM supportKnown for oneUnknown — not stated by the sourceYes
Mean time between failures (MTBF)Known for oneUnknown — not stated by the source1500000 h
Controller typeKnown for oneMaxio MAP1602Unknown — not stated by the source
Protection featuresKnown for oneShock resistantUnknown — not stated by the source
TBW ratingKnown for one1200Unknown — not stated by the source
CertificationKnown for oneCE, UKCA, FCCUnknown — not stated by the source
Power2 differ
Operating voltage3.3 V3.3 V
Power consumption (read)Differs5 W4.3 W
Power consumption (write)Differs5 W3.8 W
Power consumption (idle)Known for oneUnknown — not stated by the source0.055 W
Power consumption DevSlp (device sleep)Known for oneUnknown — not stated by the source3 mW
Weight & dimensions3 differ
WidthDiffers22 mm80.2 mm
DepthDiffers2.8 mm2.38 mm
HeightDiffers80 mm22.1 mm
WeightKnown for one9 gUnknown — not stated by the source
Packaging dataidentical
Package typeKnown for oneUnknown — not stated by the sourceBox
Package widthKnown for one97 mmUnknown — not stated by the source
Package depthKnown for one16.5 mmUnknown — not stated by the source
Package heightKnown for one123 mmUnknown — not stated by the source
Package weightKnown for one15 gUnknown — not stated by the source
Operational conditionsidentical
Operating temperature (T-T)0 - 70 °C0 - 70 °C
Operating shockKnown for oneUnknown — not stated by the source1500 G
Storage temperature (T-T)Known for one-40 - 85 °CUnknown — not stated by the source
Operating relative humidity (H-H)Known for one5 - 95%Unknown — not stated by the source
Other featuresidentical
Compliance certificatesKnown for oneRoHS, REACHUnknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More internal solid state drive comparisons

All internal solid state drive comparisons