MZ-VAP8T0B 8 TB M.2 PCI Express 5.0 NVMe V-NAND TLC
Model MZ-VAP8T0BPart no. MZ-VAP8T0B/AMEAN 887276904887
31 specifications
- Storage8 TB
- ConnectivityPCI Express 5.0
- Operating voltage3.3 V
- Width80.2 mm
- Operating temperature (T-T)0 - 70 °C
Overview
- Storage
- 8 TB
- Connectivity
- PCI Express 5.0
- Operating voltage
- 3.3 V
- Width
- 80.2 mm
- Operating temperature (T-T)
- 0 - 70 °C
- Brand
- Samsung
- Category
- Internal Solid State Drive
- Model
- MZ-VAP8T0B
- Part number
- MZ-VAP8T0B/AM
- EAN / UPC
- 887276904887
- Also known as
- Samsung MZ-VAP8T0B 8 TB M.2 PCI Express 5.0 NVMe V-NAND TLC
Specifications
31 specifications in 6 groups
Features
| Specification | Value |
|---|---|
| SSD capacity | 8 TB |
| SSD form factor | M.2 |
| Interface | PCI Express 5.0 |
| NVMe | Yes |
| NVMe version | 2.0 |
| Memory type | V-NAND TLC |
| Component for | PC/Game console |
| Hardware encryption | Yes |
| Security algorithms | 256-bit AES |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Read speed | 14800 MB/s |
| Write speed | 13400 MB/s |
| Random read (4KB) | 2200000 IOPS |
| Random write (4KB) | 2600000 IOPS |
| PCI Express interface data lanes | x4 |
| DevSlp (device sleep) support | Yes |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
Power
| Specification | Value |
|---|---|
| Operating voltage | 3.3 V |
| Power consumption (read) | 10.5 W |
| Power consumption (write) | 8.8 W |
| Power consumption (idle) | 0.009 W |
| Power consumption DevSlp (device sleep) | 8.6 mW |
Weight & dimensions
| Specification | Value |
|---|---|
| Width | 80.2 mm |
| Depth | 3.88 mm |
| Height | 80.2 mm |
Packaging data
| Specification | Value |
|---|---|
| Package type | Box |
Operational conditions
| Specification | Value |
|---|---|
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
Other features
| Specification | Value |
|---|---|
| Warranty period | 5 year(s) |
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