MZ-V9S1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
Model MZ-V9S1T0Part no. MZ-V9S1T0BWEAN 887276843704
35 specifications
- Storage1 TB
- ConnectivityPCI Express 4.0
- Weight9 g
- Operating voltage3.3 V
- Width80.2 mm
- Operating temperature (T-T)0 - 70 °C
Overview
- Storage
- 1 TB
- Connectivity
- PCI Express 4.0
- Weight
- 9 g
- Operating voltage
- 3.3 V
- Width
- 80.2 mm
- Operating temperature (T-T)
- 0 - 70 °C
- Brand
- Samsung
- Category
- Internal Solid State Drive
- Model
- MZ-V9S1T0
- Part number
- MZ-V9S1T0BW
- EAN / UPC
- 887276843704, 8806095575674
- Also known as
- Samsung MZ-V9S1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC
Specifications
35 specifications in 5 groups
Features
| Specification | Value |
|---|---|
| SSD capacity | 1 TB |
| SSD form factor | M.2 |
| Interface | PCI Express 4.0 |
| NVMe | Yes |
| NVMe version | 2.0 |
| Memory type | V-NAND TLC |
| Component for | PC |
| Hardware encryption | Yes |
| Security algorithms | 256-bit AES |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Read speed | 7150 MB/s |
| Write speed | 6300 MB/s |
| Random read (4KB) | 850000 IOPS |
| Random write (4KB) | 1350000 IOPS |
| DevSlp (device sleep) support | Yes |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
Power
| Specification | Value |
|---|---|
| Operating voltage | 3.3 V |
| Power consumption (read) | 4.3 W |
| Power consumption (write) | 4.2 W |
| Average power consumption (read) | 4.3 W |
| Average power consumption (write) | 4.2 W |
| Power consumption (idle) | 0.06 W |
| Power consumption DevSlp (device sleep) | 5 mW |
Weight & dimensions
| Specification | Value |
|---|---|
| Width | 80.2 mm |
| Depth | 2.38 mm |
| Height | 80.2 mm |
| Weight | 9 g |
Packaging data
| Specification | Value |
|---|---|
| Package width | 145 mm |
| Package depth | 100 mm |
| Package height | 24 mm |
| Package weight | 68 g |
Operational conditions
| Specification | Value |
|---|---|
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
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