MZ-V9P1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND MLC
Model MZ-V9P1T0Part no. MZ-V9P1T0GWEAN 8806094594645
28 specifications
- Storage1 TB
- ConnectivityPCI Express 4.0
- Weight28 g
- Operating voltage3.3 V
- Width80 mm
- Operating temperature (T-T)0 - 70 °C
Overview
- Storage
- 1 TB
- Connectivity
- PCI Express 4.0
- Weight
- 28 g
- Operating voltage
- 3.3 V
- Width
- 80 mm
- Operating temperature (T-T)
- 0 - 70 °C
- Brand
- Samsung
- Category
- Internal Solid State Drive
- Model
- MZ-V9P1T0
- Part number
- MZ-V9P1T0GW
- EAN / UPC
- 8806094594645
- Also known as
- Samsung MZ-V9P1T0 1 TB M.2 PCI Express 4.0 NVMe V-NAND MLC
Specifications
28 specifications in 4 groups
Features
| Specification | Value |
|---|---|
| SSD capacity | 1 TB |
| SSD form factor | M.2 |
| Interface | PCI Express 4.0 |
| NVMe | Yes |
| NVMe version | 2.0 |
| Memory type | V-NAND MLC |
| Component for | PC/Game console |
| Hardware encryption | Yes |
| Security algorithms | 256-bit AES |
| M.2 SSD size | 2280 (22 x 80 mm) |
| Read speed | 7450 MB/s |
| Write speed | 6900 MB/s |
| Random read (4KB) | 1200000 IOPS |
| Random write (4KB) | 1550000 IOPS |
| DevSlp (device sleep) support | Yes |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
Power
| Specification | Value |
|---|---|
| Operating voltage | 3.3 V |
| Power consumption (max) | 7.8 W |
| Power consumption (average) | 5.4 W |
| Power consumption (idle) | 0.05 W |
Weight & dimensions
| Specification | Value |
|---|---|
| Width | 80 mm |
| Depth | 8.2 mm |
| Height | 24.3 mm |
| Weight | 28 g |
Operational conditions
| Specification | Value |
|---|---|
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
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