Product comparison · 2 memory modules

Samsung MV-3T4G3D memory module vs Samsung MV-3V2G3/US memory module

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  • 8specifications compared
  • 3differ
  • 5identical
  • 1known for one product only

Key differences

  • Internal memory
    • MV-3T4G3D memory module:8 GB
    • MV-3V2G3/US memory module:2 GB
  • Memory layout (modules x size)
    • MV-3T4G3D memory module:2 x 4 GB
    • MV-3V2G3/US memory module:1 x 2 GB
  • Memory form factor
    • MV-3T4G3D memory module:204-pin SO-DIMM
    • MV-3V2G3/US memory module:240-pin DIMM

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Comparison of MV-3T4G3D, MV-3V2G3/US
9 specifications
Features3 differ
Internal memoryDiffers8 GB2 GB
Memory layout (modules x size)Differs2 x 4 GB1 x 2 GB
Internal memory typeDDR3DDR3
Component forPC/ServerPC/Server
Memory form factorDiffers204-pin SO-DIMM240-pin DIMM
CAS latency1111
Memory clock speed1600 MHz1600 MHz
Memory voltage1.35 V1.35 V
Packaging dataidentical
Package typeKnown for oneUnknown — not stated by the sourceDIMM

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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