Product comparison · 2 memory modules

Samsung 4GB DDR3-1333MHz vs Samsung MV-3V2G3/US memory module

8specifications compared
5differ
3identical
6known for one product only

Key differences

Internal memory
- 4GB DDR3-1333MHz:4 GB
- MV-3V2G3/US memory module:2 GB
Memory layout (modules x size)
- 4GB DDR3-1333MHz:1 x 4 GB
- MV-3V2G3/US memory module:1 x 2 GB
CAS latency
- 4GB DDR3-1333MHz:9
- MV-3V2G3/US memory module:11
Memory clock speed
- 4GB DDR3-1333MHz:1333 MHz
- MV-3V2G3/US memory module:1600 MHz
Memory voltage
- 4GB DDR3-1333MHz:1.5 V
- MV-3V2G3/US memory module:1.35 V

Side by side

Differences highlightedShow differences only

Comparison of 4GB DDR3-1333MHz, MV-3V2G3/US
14 specifications	A Samsung 4GB DDR3-1333MHz View product	B Samsung MV-3V2G3/US memory module Model MV-3V2G3/US View product
Features5 differ
Internal memoryDiffers	4 GB	2 GB
Memory layout (modules x size)Differs	1 x 4 GB	1 x 2 GB
Internal memory type	DDR3	DDR3
Memory form factor	240-pin DIMM	240-pin DIMM
ECCKnown for one	Yes	Unknown — not stated by the source
CAS latencyDiffers	9	11
Memory clock speedDiffers	1333 MHz	1600 MHz
Buffered memory typeKnown for one	Registered (buffered)	Unknown — not stated by the source
Memory rankingKnown for one	1	Unknown — not stated by the source
Memory voltageDiffers	1.5 V	1.35 V
Module configurationKnown for one	512M x 72	Unknown — not stated by the source
Component forKnown for one	Unknown — not stated by the source	PC/Server
Weight & dimensionsidentical
HeightKnown for one	30 mm	Unknown — not stated by the source
Packaging dataidentical
Package type	DIMM	DIMM

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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