Product comparison · 2 memory modules

Samsung 2GB DDR3 1333MHz ECC Unbuffered DIMM vs Samsung MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M

Key differences

Internal memory type
- 2GB DDR3 1333MHz ECC Unbuffered DIMM:DDR3
- MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M:DDR2
ECC
- 2GB DDR3 1333MHz ECC Unbuffered DIMM:Yes
- MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M:No
CAS latency
- 2GB DDR3 1333MHz ECC Unbuffered DIMM:9
- MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M:6
Memory clock speed
- 2GB DDR3 1333MHz ECC Unbuffered DIMM:1333 MHz
- MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M:800 MHz
Memory voltage
- 2GB DDR3 1333MHz ECC Unbuffered DIMM:1.5 V
- MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M:1.8 V

Differences highlightedShow differences only

Comparison of 2GB DDR3 1333MHz ECC Unbuffered DIMM, MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M
13 specifications	A Samsung 2GB DDR3 1333MHz ECC Unbuffered DIMM View product	B Samsung MV-2V2G4/US - 2 GB - DDR2 SDRAM - 800 M View product
Features5 differ
Internal memory typeDiffers	DDR3	DDR2
ECCDiffers	Yes	No
CAS latencyDiffers	9	6
Memory clock speedDiffers	1333 MHz	800 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Memory voltageDiffers	1.5 V	1.8 V
Memory typeKnown for one	Unknown — not stated by the source	DDR2
Packaging dataidentical
Package typeKnown for one	DIMM	Unknown — not stated by the source
Other featuresidentical
Chips organisationKnown for one	256Mx72	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.