Product comparison · 2 memory modules

Lenovo 00D4970 memory module vs Samsung 4GB DDR3 1600MHz

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  • 9specifications compared
  • 3differ
  • 6identical
  • 9known for one product only

Key differences

  • Internal memory
    • 00D4970 memory module:16 GB
    • 4GB DDR3 1600MHz:4 GB
  • Memory layout (modules x size)
    • 00D4970 memory module:1 x 16 GB
    • 4GB DDR3 1600MHz:1 x 4 GB
  • Memory voltage
    • 00D4970 memory module:1.5 V
    • 4GB DDR3 1600MHz:1.35 V

Side by side

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Comparison of 00D4970, 4GB DDR3 1600MHz
18 specifications
Features3 differ
Internal memoryDiffers16 GB4 GB
Memory layout (modules x size)Differs1 x 16 GB1 x 4 GB
Internal memory typeDDR3DDR3
Component forPC/ServerPC/Server
Memory form factor240-pin DIMM240-pin DIMM
ECCYesYes
CAS latency1111
Memory clock speed1600 MHz1600 MHz
Buffered memory typeKnown for oneUnknown — not stated by the sourceRegistered (buffered)
Memory voltageDiffers1.5 V1.35 V
Module configurationKnown for oneUnknown — not stated by the source512M x 72
Row cycle timeKnown for oneUnknown — not stated by the source11 ns
Refresh row cycle timeKnown for oneUnknown — not stated by the source11 ns
Operational conditionsidentical
Operating temperature (T-T)Known for oneUnknown — not stated by the source0 - 85 °C
Sustainabilityidentical
Compliance certificatesKnown for oneUnknown — not stated by the sourceRoHS
Weight & dimensionsidentical
WidthKnown for oneUnknown — not stated by the source133.3 mm
DepthKnown for oneUnknown — not stated by the source4 mm
HeightKnown for oneUnknown — not stated by the source30 mm

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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