Product comparison · 2 memory modules

Kingston Technology ValueRAM KVR13LR9D8/4ED memory module vs Kingston Technology ValueRAM KVR16R11S4/4HE memory module

17specifications compared
5differ
12identical
0known for one product only

Key differences

The Kingston Technology ValueRAM KVR16R11S4/4HE memory module has 2 more CAS latency than the Kingston Technology ValueRAM KVR13LR9D8/4ED memory module (11 vs 9). The Kingston Technology ValueRAM KVR13LR9D8/4ED memory module has 1 more memory ranking than the Kingston Technology ValueRAM KVR16R11S4/4HE memory module (2 vs 1). The Kingston Technology ValueRAM KVR16R11S4/4HE memory module has 0.15 V more memory voltage than the Kingston Technology ValueRAM KVR13LR9D8/4ED memory module (1.5 V vs 1.35 V). Chips organisation: X8 on the Kingston Technology ValueRAM KVR13LR9D8/4ED memory module, X4 on the Kingston Technology ValueRAM KVR16R11S4/4HE memory module.

CAS latency
- ValueRAM KVR13LR9D8/4ED memory module:9
- ValueRAM KVR16R11S4/4HE memory module:11
Memory ranking
- ValueRAM KVR13LR9D8/4ED memory module:2
- ValueRAM KVR16R11S4/4HE memory module:1
Memory voltage
- ValueRAM KVR13LR9D8/4ED memory module:1.35 V
- ValueRAM KVR16R11S4/4HE memory module:1.5 V
Chips organisation
- ValueRAM KVR13LR9D8/4ED memory module:X8
- ValueRAM KVR16R11S4/4HE memory module:X4
Bus clock rate
- ValueRAM KVR13LR9D8/4ED memory module:1333 MHz
- ValueRAM KVR16R11S4/4HE memory module:1600 MHz

Side by side

Differences highlightedShow differences only

Comparison of KVR13LR9D8/4ED, KVR16R11S4/4HE
17 specifications	A Kingston Technology ValueRAM KVR13LR9D8/4ED memory module Model KVR13LR9D8/4ED View product	B Kingston Technology ValueRAM KVR16R11S4/4HE memory module Model KVR16R11S4/4HE View product
Features3 differ
Internal memory	4 GB	4 GB
Internal memory type	DDR3	DDR3
Component for	PC/Server	PC/Server
Memory form factor	240-pin DIMM	240-pin DIMM
ECC	Yes	Yes
CAS latencyDiffers	9	11
Memory bus	72 bit	72 bit
Buffered memory type	Registered (buffered)	Registered (buffered)
Memory rankingDiffers	2	1
Memory voltageDiffers	1.35 V	1.5 V
Module configuration	512M X 72	512M X 72
Lead plating	Gold	Gold
Other features2 differ
Chips organisationDiffers	X8	X4
Bus clock rateDiffers	1333 MHz	1600 MHz
Error indication	ECC	ECC
Internal memory	4096 MB	4096 MB
Memory layout	1 x 4096 MB	1 x 4096 MB

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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