Product comparison · 2 memory modules

Kingston Technology 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8 vs Samsung 2GB, DDR II SDRAM, 800MHz, soDIMM

5specifications compared
3differ
2identical
4known for one product only

Key differences

Internal memory
- 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8:4 GB
- 2GB, DDR II SDRAM, 800MHz, soDIMM:2 GB
Memory form factor
- 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8:240-pin DIMM
- 2GB, DDR II SDRAM, 800MHz, soDIMM:200-pin SO-DIMM
ECC
- 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8:Yes
- 2GB, DDR II SDRAM, 800MHz, soDIMM:No

Side by side

Differences highlightedShow differences only

Comparison of 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8, 2GB, DDR II SDRAM, 800MHz, soDIMM
9 specifications	A Kingston Technology 4GB, 800MHz, DDR2, ECC Fully Buffered, CL5 DIMM, Quad Rank, x8 View product	B Samsung 2GB, DDR II SDRAM, 800MHz, soDIMM View product
Features3 differ
Internal memoryDiffers	4 GB	2 GB
Internal memory type	DDR2	DDR2
Memory form factorDiffers	240-pin DIMM	200-pin SO-DIMM
ECCDiffers	Yes	No
CAS latencyKnown for one	5	Unknown — not stated by the source
Memory voltage	1.8 V	1.8 V
Lead platingKnown for one	Gold	Unknown — not stated by the source
Memory clock speedKnown for one	Unknown — not stated by the source	800 MHz
Other featuresidentical
Number of pinsKnown for one	Unknown — not stated by the source	200

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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