Product comparison · 2 memory modules

Kingston Technology 4GB 1333MHz DDR3L ECC CL9 DIMM vs Kingston Technology 4GB 1600MHz DDR3 ECC CL11 DIMM

Key differences

CAS latency
- 4GB 1333MHz DDR3L ECC CL9 DIMM:9
- 4GB 1600MHz DDR3 ECC CL11 DIMM:11
Memory voltage
- 4GB 1333MHz DDR3L ECC CL9 DIMM:1.35 V
- 4GB 1600MHz DDR3 ECC CL11 DIMM:1.5 V
Row cycle time
- 4GB 1333MHz DDR3L ECC CL9 DIMM:49.5 ns
- 4GB 1600MHz DDR3 ECC CL11 DIMM:48 ns
Refresh row cycle time
- 4GB 1333MHz DDR3L ECC CL9 DIMM:160 ns
- 4GB 1600MHz DDR3 ECC CL11 DIMM:260 ns
Row active time
- 4GB 1333MHz DDR3L ECC CL9 DIMM:36 ns
- 4GB 1600MHz DDR3 ECC CL11 DIMM:35 ns
Bus clock rate
- 4GB 1333MHz DDR3L ECC CL9 DIMM:1333 MHz
- 4GB 1600MHz DDR3 ECC CL11 DIMM:1600 MHz

Differences highlightedShow differences only

Comparison of 4GB 1333MHz DDR3L ECC CL9 DIMM, 4GB 1600MHz DDR3 ECC CL11 DIMM
26 specifications	A Kingston Technology 4GB 1333MHz DDR3L ECC CL9 DIMM View product	B Kingston Technology 4GB 1600MHz DDR3 ECC CL11 DIMM View product
Features5 differ
CAS latencyDiffers	9	11
Memory voltageDiffers	1.35 V	1.5 V
Row cycle timeDiffers	49.5 ns	48 ns
Refresh row cycle timeDiffers	160 ns	260 ns
Row active timeDiffers	36 ns	35 ns
SPD profileKnown for one	Unknown — not stated by the source	Yes
Other features1 differ
Bus clock rateDiffers	1333 MHz	1600 MHz

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.