Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4 vs Kingston Technology Memory 4GB DDR 266MHz RegECC CL25

Key differences

The Kingston Technology Memory 4GB DDR 266MHz RegECC CL25 has 2 GB more internal memory than the Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4 (4 GB vs 2 GB). The Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4 has 0.5 more CAS latency than the Kingston Technology Memory 4GB DDR 266MHz RegECC CL25 (3 vs 2.5). The Kingston Technology Memory 4GB DDR 266MHz RegECC CL25 has 0.7 V more memory voltage than the Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4 (2.5 V vs 1.8 V). Internal memory type: DDR2 on the Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4, DDR on the Kingston Technology Memory 4GB DDR 266MHz RegECC CL25. Memory form factor: 240-pin DIMM on the Kingston Technology 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4, 184-Pin DIMM on the Kingston Technology Memory 4GB DDR 266MHz RegECC CL25.

• Internal memory
  • 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4:2 GB
  • Memory 4GB DDR 266MHz RegECC CL25:4 GB
• Internal memory type
  • 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4:DDR2
  • Memory 4GB DDR 266MHz RegECC CL25:DDR
• Memory form factor
  • 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4:240-pin DIMM
  • Memory 4GB DDR 266MHz RegECC CL25:184-Pin DIMM
• CAS latency
  • 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4:3
  • Memory 4GB DDR 266MHz RegECC CL25:2.5
• Memory voltage
  • 2GB 400MHz DDR2 ECC Registered CL3 DIMM Dual Rank, x4:1.8 V
  • Memory 4GB DDR 266MHz RegECC CL25:2.5 V