Kingston Technology 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8 vs Kingston Technology 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8

Key differences

The Kingston Technology 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8 has 0.5 more CAS latency than the Kingston Technology 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8 (3 vs 2.5). The Kingston Technology 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8 has 4 bit more check width than the Kingston Technology 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8 (8 bit vs 4 bit). The Kingston Technology 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8 has 0.1 V more memory voltage than the Kingston Technology 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8 (2.6 V vs 2.5 V).

• CAS latency
  • 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8:2.5
  • 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8:3
• Check width
  • 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8:4 bit
  • 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8:8 bit
• Memory voltage
  • 1GB 333MHz DDR ECC Registered CL2.5 DIMM Dual Rank, x8:2.5 V
  • 1GB 400MHz DDR ECC Registered CL3 (3-3-3) DIMM Dual Rank, x8:2.6 V