Product comparison · 2 memory modules

HyperX 4GB DDR3L-1866 vs Kingston Technology 2GB DDR3 1600MHz ECC

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  • 14specifications compared
  • 13differ
  • 1identical
  • 13known for one product only

Key differences

The HyperX 4GB DDR3L-1866 has 2 GB more internal memory than the Kingston Technology 2GB DDR3 1600MHz ECC (4 GB vs 2 GB). The Kingston Technology 2GB DDR3 1600MHz ECC has 8 bit more memory bus than the HyperX 4GB DDR3L-1866 (72 bit vs 64 bit). The Kingston Technology 2GB DDR3 1600MHz ECC has 0.15 V more memory voltage than the HyperX 4GB DDR3L-1866 (1.5 V vs 1.35 V). Only the Kingston Technology 2GB DDR3 1600MHz ECC has ECC. Memory layout (modules x size): 1 x 4 GB on the HyperX 4GB DDR3L-1866, 1 x 2 GB on the Kingston Technology 2GB DDR3 1600MHz ECC.

  • Internal memory
    • 4GB DDR3L-1866:4 GB
    • 2GB DDR3 1600MHz ECC:2 GB
  • Memory layout (modules x size)
    • 4GB DDR3L-1866:1 x 4 GB
    • 2GB DDR3 1600MHz ECC:1 x 2 GB
  • Internal memory type
    • 4GB DDR3L-1866:DDR3L
    • 2GB DDR3 1600MHz ECC:DDR3
  • Memory form factor
    • 4GB DDR3L-1866:204-pin SO-DIMM
    • 2GB DDR3 1600MHz ECC:240-pin DIMM
  • ECC
    • 4GB DDR3L-1866:No
    • 2GB DDR3 1600MHz ECC:Yes
  • Memory bus
    • 4GB DDR3L-1866:64 bit
    • 2GB DDR3 1600MHz ECC:72 bit
  • Buffered memory type
    • 4GB DDR3L-1866:Unregistered (unbuffered)
    • 2GB DDR3 1600MHz ECC:Registered (buffered)
  • Memory voltage
    • 4GB DDR3L-1866:1.35 V
    • 2GB DDR3 1600MHz ECC:1.5 V

Side by side

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Comparison of 4GB DDR3L-1866, 2GB DDR3 1600MHz ECC
27 specifications
Features9 differ
Internal memoryDiffers4 GB2 GB
Memory layout (modules x size)Differs1 x 4 GB1 x 2 GB
Internal memory typeDiffersDDR3LDDR3
Component forKnown for oneLaptopUnknown — not stated by the source
Memory form factorDiffers204-pin SO-DIMM240-pin DIMM
ECCDiffersNoYes
CAS latencyKnown for one11Unknown — not stated by the source
Memory clock speedKnown for one1866 MHzUnknown — not stated by the source
Memory busDiffers64 bit72 bit
Buffered memory typeDiffersUnregistered (unbuffered)Registered (buffered)
Memory voltageDiffers1.35 V1.5 V
Module configurationDiffers512M x 64256M X 72
Row cycle timeKnown for one44.7 nsUnknown — not stated by the source
Refresh row cycle timeKnown for one260 nsUnknown — not stated by the source
Lead platingGoldGold
Memory rankingKnown for oneUnknown — not stated by the source1
Operational conditionsidentical
Operating temperature (T-T)Known for one0 - 85 °CUnknown — not stated by the source
Storage temperature (T-T)Known for one-55 - 100 °CUnknown — not stated by the source
Weight & dimensionsidentical
WidthKnown for one67.6 mmUnknown — not stated by the source
HeightKnown for one30 mmUnknown — not stated by the source
Other features4 differ
Bus clock rateDiffers1866 MHz1600 MHz
Error indicationDiffersNoECC
Internal memoryDiffers4096 MB2048 MB
Memory layoutDiffers1 x 4096 MB1 x 2048 MB
Chips organisationKnown for oneUnknown — not stated by the sourcex8
Country of originKnown for oneUnknown — not stated by the sourceUnited States
Packaging dataidentical
Package typeKnown for oneUnknown — not stated by the sourceDIMM

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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