Product comparison · 2 memory modules

HyperX 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2) vs Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V

Add a product
  • 8specifications compared
  • 6differ
  • 2identical
  • 10known for one product only

Key differences

The Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V has 4 GB more internal memory than the HyperX 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2) (8 GB vs 4 GB). The Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V has 1 more CAS latency than the HyperX 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2) (5 vs 4). The HyperX 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2) has 0.25 V more memory voltage than the Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V (1.8 V vs 1.55 V). Only the Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V has ECC. Memory layout (modules x size): 2 x 2 GB on the HyperX 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2), 2 x 4 GB on the Kingston Technology 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V.

  • Internal memory
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):4 GB
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:8 GB
  • Memory layout (modules x size)
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):2 x 2 GB
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:2 x 4 GB
  • Memory form factor
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):200-pin SO-DIMM
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:240-pin DIMM
  • ECC
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):No
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:Yes
  • CAS latency
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):4
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:5
  • Memory voltage
    • 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2):1.8 V
    • 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V:1.55 V

Side by side

Differences highlightedShow differences only (on)
Comparison of 4GB, 800MHz, DDR2, Non-ECC, Ultra Low-Lat CL4 (4-4-4-12), SODIMM (Kit of 2), 8GB 667MHz DDR2 ECC Fully Buff CL5 DIMM (Kit of 2) Quad Rank, x8 1.55V
18 specifications
Features6 differ
Internal memoryDiffers4 GB8 GB
Memory layout (modules x size)Differs2 x 2 GB2 x 4 GB
Memory form factorDiffers200-pin SO-DIMM240-pin DIMM
ECCDiffersNoYes
CAS latencyDiffers45
Memory clock speedKnown for one800 MHzUnknown — not stated by the source
Memory busKnown for one64 bitUnknown — not stated by the source
Buffered memory typeKnown for oneUnregistered (unbuffered)Unknown — not stated by the source
Memory rankingKnown for one2Unknown — not stated by the source
Memory voltageDiffers1.8 V1.55 V
Module configurationKnown for one256M X 64Unknown — not stated by the source
Other featuresidentical
Chips organisationKnown for oneX8Unknown — not stated by the source
Bus clock rateKnown for one800 MHzUnknown — not stated by the source
Error indicationKnown for oneNoUnknown — not stated by the source
Internal memoryKnown for one4096 MBUnknown — not stated by the source
Memory layoutKnown for one2 x 2048 MBUnknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More memory module comparisons

All memory module comparisons