Product comparison · 2 memory modules

Hypertec HYR4211024416GBOE memory module vs Samsung M378B5173EB0-YK0 memory module

Key differences

Internal memory
- HYR4211024416GBOE memory module:16 GB
- M378B5173EB0-YK0 memory module:4 GB
Memory layout (modules x size)
- HYR4211024416GBOE memory module:1 x 16 GB
- M378B5173EB0-YK0 memory module:1 x 4 GB
Internal memory type
- HYR4211024416GBOE memory module:DDR4
- M378B5173EB0-YK0 memory module:DDR3
Memory form factor
- HYR4211024416GBOE memory module:288-pin DIMM
- M378B5173EB0-YK0 memory module:240-pin DIMM
Memory clock speed
- HYR4211024416GBOE memory module:2133 MHz
- M378B5173EB0-YK0 memory module:1600 MHz
Buffered memory type
- HYR4211024416GBOE memory module:Registered (buffered)
- M378B5173EB0-YK0 memory module:Unregistered (unbuffered)
Memory voltage
- HYR4211024416GBOE memory module:1.2 V
- M378B5173EB0-YK0 memory module:1.35 V

Differences highlightedShow differences only

Comparison of HYR4211024416GBOE, M378B5173EB0-YK0
11 specifications	A Hypertec HYR4211024416GBOE memory module Model HYR4211024416GBOE View product	B Samsung M378B5173EB0-YK0 memory module Model M378B5173EB0-YK0 View product
Features7 differ
Internal memoryDiffers	16 GB	4 GB
Memory layout (modules x size)Differs	1 x 16 GB	1 x 4 GB
Internal memory typeDiffers	DDR4	DDR3
Memory form factorDiffers	288-pin DIMM	240-pin DIMM
CAS latencyKnown for one	Unknown — not stated by the source	11
Memory clock speedDiffers	2133 MHz	1600 MHz
Buffered memory typeDiffers	Registered (buffered)	Unregistered (unbuffered)
Memory rankingKnown for one	Unknown — not stated by the source	1
Memory voltageDiffers	1.2 V	1.35 V
Other featuresidentical
Doesn't containKnown for one	Unknown — not stated by the source	Halogen

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.