Product comparison · 2 memory modules

HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit vs Samsung 8GB DDR3 1866MHz

9specifications compared
5differ
4identical
11known for one product only

Key differences

The Samsung 8GB DDR3 1866MHz has 4 GB more internal memory than the HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit (8 GB vs 4 GB). The Samsung 8GB DDR3 1866MHz has 4 more CAS latency than the HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit (13 vs 9). The Samsung 8GB DDR3 1866MHz has 533 MHz more memory clock speed than the HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit (1866 MHz vs 1333 MHz). Memory layout (modules x size): 1 x 4 GB on the HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit, 1 x 8 GB on the Samsung 8GB DDR3 1866MHz.

Internal memory
- 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit:4 GB
- 8GB DDR3 1866MHz:8 GB
Memory layout (modules x size)
- 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit:1 x 4 GB
- 8GB DDR3 1866MHz:1 x 8 GB
CAS latency
- 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit:9
- 8GB DDR3 1866MHz:13
Memory clock speed
- 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit:1333 MHz
- 8GB DDR3 1866MHz:1866 MHz
Memory voltage
- 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit:1.35 V
- 8GB DDR3 1866MHz:1.5 V

Side by side

Differences highlightedShow differences only

Comparison of 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit, 8GB DDR3 1866MHz
20 specifications	A HP 4GB (1x4GB) Dual Rank x8 PC3L-10600E (DDR3-1333) Unbuffered CAS-9 Low Voltage Memory Kit View product	B Samsung 8GB DDR3 1866MHz View product
Features5 differ
Internal memoryDiffers	4 GB	8 GB
Memory layout (modules x size)Differs	1 x 4 GB	1 x 8 GB
CAS latencyDiffers	9	13
Memory clock speedDiffers	1333 MHz	1866 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Registered (buffered)
Memory voltageDiffers	1.35 V	1.5 V
Module configurationKnown for one	Unknown — not stated by the source	1024M x 72
Row cycle timeKnown for one	Unknown — not stated by the source	13 ns
Refresh row cycle timeKnown for one	Unknown — not stated by the source	13 ns
Memory rankingKnown for one	2	Unknown — not stated by the source
Operational conditionsidentical
Operating temperature (T-T)Known for one	Unknown — not stated by the source	0 - 85 °C
Sustainabilityidentical
Compliance certificatesKnown for one	Unknown — not stated by the source	RoHS
Weight & dimensionsidentical
WidthKnown for one	Unknown — not stated by the source	133.3 mm
DepthKnown for one	Unknown — not stated by the source	4 mm
HeightKnown for one	Unknown — not stated by the source	30 mm
Other featuresidentical
Doesn't containKnown for one	Unknown — not stated by the source	Halogen

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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