Product comparison · 2 memory modules

HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit vs Samsung M470T2864EH3-CF7 memory module

9specifications compared
8differ
1identical
2known for one product only

Key differences

The HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit has 31 GB more internal memory than the Samsung M470T2864EH3-CF7 memory module (32 GB vs 1 GB). The HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit has 9 more CAS latency than the Samsung M470T2864EH3-CF7 memory module (15 vs 6). The HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit has 1,333 MHz more memory clock speed than the Samsung M470T2864EH3-CF7 memory module (2133 MHz vs 800 MHz). Memory layout (modules x size): 1 x 32 GB on the HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit, 1 x 1 GB on the Samsung M470T2864EH3-CF7 memory module. Internal memory type: DDR4 on the HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit, DDR2 on the Samsung M470T2864EH3-CF7 memory module.

Internal memory
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:32 GB
- M470T2864EH3-CF7 memory module:1 GB
Memory layout (modules x size)
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:1 x 32 GB
- M470T2864EH3-CF7 memory module:1 x 1 GB
Internal memory type
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:DDR4
- M470T2864EH3-CF7 memory module:DDR2
Component for
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:PC/Server
- M470T2864EH3-CF7 memory module:Laptop
Memory form factor
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:288-pin DIMM
- M470T2864EH3-CF7 memory module:200-pin SO-DIMM
CAS latency
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:15
- M470T2864EH3-CF7 memory module:6
Memory clock speed
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:2133 MHz
- M470T2864EH3-CF7 memory module:800 MHz
Memory voltage
- 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit:1.2 V
- M470T2864EH3-CF7 memory module:1.8 V

Side by side

Differences highlightedShow differences only

Comparison of 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit, M470T2864EH3-CF7
11 specifications	A HP 32GB (1x32GB) Dual Rank x4 DDR4-2133 CAS-15-15-15 Registered Memory Kit View product	B Samsung M470T2864EH3-CF7 memory module Model M470T2864EH3-CF7 View product
Features8 differ
Internal memoryDiffers	32 GB	1 GB
Memory layout (modules x size)Differs	1 x 32 GB	1 x 1 GB
Internal memory typeDiffers	DDR4	DDR2
Component forDiffers	PC/Server	Laptop
Memory form factorDiffers	288-pin DIMM	200-pin SO-DIMM
ECCKnown for one	Unknown — not stated by the source	No
CAS latencyDiffers	15	6
Memory clock speedDiffers	2133 MHz	800 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)
Memory voltageDiffers	1.2 V	1.8 V

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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