Product comparison · 2 memory modules

HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit vs HP 416474-001 memory module

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  • 10specifications compared
  • 6differ
  • 4identical
  • 2known for one product only

Key differences

The HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit has 8 GB more internal memory than the HP 416474-001 memory module (16 GB vs 8 GB). The HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit has 933 MHz more memory clock speed than the HP 416474-001 memory module (1600 MHz vs 667 MHz). The HP 416474-001 memory module has 0.15 V more memory voltage than the HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit (1.5 V vs 1.35 V). Memory layout (modules x size): 1 x 16 GB on the HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit, 1 x 8 GB on the HP 416474-001 memory module. Internal memory type: DDR3 on the HP 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit, DDR2 on the HP 416474-001 memory module.

  • Internal memory
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:16 GB
    • 416474-001 memory module:8 GB
  • Memory layout (modules x size)
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:1 x 16 GB
    • 416474-001 memory module:1 x 8 GB
  • Internal memory type
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:DDR3
    • 416474-001 memory module:DDR2
  • Memory clock speed
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:1600 MHz
    • 416474-001 memory module:667 MHz
  • Buffered memory type
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:Registered (buffered)
    • 416474-001 memory module:Fully buffered
  • Memory voltage
    • 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit:1.35 V
    • 416474-001 memory module:1.5 V

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Comparison of 16GB (1x16GB) Dual Rank x4 PC3L-12800R (DDR3-1600) Registered CAS-11 Low Voltage Memory Kit, 416474-001
12 specifications
Features6 differ
Internal memoryDiffers16 GB8 GB
Memory layout (modules x size)Differs1 x 16 GB1 x 8 GB
Internal memory typeDiffersDDR3DDR2
Component forPC/ServerPC/Server
Memory form factor240-pin DIMM240-pin DIMM
ECCYesYes
CAS latencyKnown for one11Unknown — not stated by the source
Memory clock speedDiffers1600 MHz667 MHz
Buffered memory typeDiffersRegistered (buffered)Fully buffered
Memory ranking22
Memory voltageDiffers1.35 V1.5 V
Logistics dataidentical
Harmonized System (HS) codeKnown for oneUnknown — not stated by the source84733020

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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