Product comparison · 2 memory modules

Goodram W-FU26S16G memory module vs Samsung MEM-DR416L-SL02-ER29 memory module

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  • 5specifications compared
  • 3differ
  • 2identical
  • 4known for one product only

Key differences

The Samsung MEM-DR416L-SL02-ER29 memory module has 267 MHz more memory clock speed than the Goodram W-FU26S16G memory module (2933 MHz vs 2666 MHz). Component for: Laptop on the Goodram W-FU26S16G memory module, PC/Server on the Samsung MEM-DR416L-SL02-ER29 memory module. Memory form factor: 260-pin SO-DIMM on the Goodram W-FU26S16G memory module, 288-pin DIMM on the Samsung MEM-DR416L-SL02-ER29 memory module.

  • Component for
    • W-FU26S16G memory module:Laptop
    • MEM-DR416L-SL02-ER29 memory module:PC/Server
  • Memory form factor
    • W-FU26S16G memory module:260-pin SO-DIMM
    • MEM-DR416L-SL02-ER29 memory module:288-pin DIMM
  • Memory clock speed
    • W-FU26S16G memory module:2666 MHz
    • MEM-DR416L-SL02-ER29 memory module:2933 MHz

Side by side

Differences highlightedShow differences only (on)
Comparison of W-FU26S16G, MEM-DR416L-SL02-ER29
9 specifications
B

Samsung

MEM-DR416L-SL02-ER29 memory module

Model MEM-DR416L-SL02-ER29

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Features3 differ
Component forDiffersLaptopPC/Server
Memory form factorDiffers260-pin SO-DIMM288-pin DIMM
ECCKnown for oneUnknown — not stated by the sourceYes
Memory clock speedDiffers2666 MHz2933 MHz
Buffered memory typeKnown for oneUnknown — not stated by the sourceRegistered (buffered)
Memory rankingKnown for oneUnknown — not stated by the source1
Memory layout (modules x size)Known for one1 x 16 GBUnknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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