Product comparison · 2 memory modules

Goodram Play 8GB DDR3-1866MHz vs Samsung M395T5160QZ4-CE65 memory module

Key differences

Internal memory
- Play 8GB DDR3-1866MHz:8 GB
- M395T5160QZ4-CE65 memory module:4 GB
Memory layout (modules x size)
- Play 8GB DDR3-1866MHz:1 x 8 GB
- M395T5160QZ4-CE65 memory module:1 x 4 GB
Internal memory type
- Play 8GB DDR3-1866MHz:DDR3
- M395T5160QZ4-CE65 memory module:DDR2
ECC
- Play 8GB DDR3-1866MHz:No
- M395T5160QZ4-CE65 memory module:Yes
CAS latency
- Play 8GB DDR3-1866MHz:10
- M395T5160QZ4-CE65 memory module:5
Memory clock speed
- Play 8GB DDR3-1866MHz:1866 MHz
- M395T5160QZ4-CE65 memory module:667 MHz
Buffered memory type
- Play 8GB DDR3-1866MHz:Unregistered (unbuffered)
- M395T5160QZ4-CE65 memory module:Fully buffered

Differences highlightedShow differences only

Comparison of Play 8GB DDR3-1866MHz, M395T5160QZ4-CE65
15 specifications	A Goodram Play 8GB DDR3-1866MHz View product	B Samsung M395T5160QZ4-CE65 memory module Model M395T5160QZ4-CE65 View product
Features7 differ
Internal memoryDiffers	8 GB	4 GB
Memory layout (modules x size)Differs	1 x 8 GB	1 x 4 GB
Internal memory typeDiffers	DDR3	DDR2
ECCDiffers	No	Yes
CAS latencyDiffers	10	5
Memory clock speedDiffers	1866 MHz	667 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Fully buffered
Memory channelsKnown for one	Single-channel	Unknown — not stated by the source
Product colourKnown for one	Black	Unknown — not stated by the source
Cooling typeKnown for one	Heatsink	Unknown — not stated by the source
Lead platingKnown for one	Gold	Unknown — not stated by the source
Memory rankingKnown for one	Unknown — not stated by the source	2
Memory voltageKnown for one	Unknown — not stated by the source	1.8 V

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.