Product comparison · 2 memory modules

Goodram GY1866D364L9AS/8GDC memory module vs Samsung M393A1G40EB1-CTD memory module

Key differences

Memory layout (modules x size)
- GY1866D364L9AS/8GDC memory module:2 x 4 GB
- M393A1G40EB1-CTD memory module:1 x 8 GB
Internal memory type
- GY1866D364L9AS/8GDC memory module:DDR3
- M393A1G40EB1-CTD memory module:DDR4
Memory form factor
- GY1866D364L9AS/8GDC memory module:240-pin DIMM
- M393A1G40EB1-CTD memory module:288-pin DIMM
ECC
- GY1866D364L9AS/8GDC memory module:No
- M393A1G40EB1-CTD memory module:Yes
CAS latency
- GY1866D364L9AS/8GDC memory module:9
- M393A1G40EB1-CTD memory module:19
Memory clock speed
- GY1866D364L9AS/8GDC memory module:1866 MHz
- M393A1G40EB1-CTD memory module:2666 MHz
Buffered memory type
- GY1866D364L9AS/8GDC memory module:Unregistered (unbuffered)
- M393A1G40EB1-CTD memory module:Registered (buffered)
Memory voltage
- GY1866D364L9AS/8GDC memory module:1.5 V
- M393A1G40EB1-CTD memory module:1.2 V

Differences highlightedShow differences only

Comparison of GY1866D364L9AS/8GDC, M393A1G40EB1-CTD
15 specifications	A Goodram GY1866D364L9AS/8GDC memory module Model GY1866D364L9AS/8GDC View product	B Samsung M393A1G40EB1-CTD memory module Model M393A1G40EB1-CTD View product
Features8 differ
Memory layout (modules x size)Differs	2 x 4 GB	1 x 8 GB
Internal memory typeDiffers	DDR3	DDR4
Memory form factorDiffers	240-pin DIMM	288-pin DIMM
ECCDiffers	No	Yes
CAS latencyDiffers	9	19
Memory clock speedDiffers	1866 MHz	2666 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Registered (buffered)
Memory channelsKnown for one	Dual-channel	Unknown — not stated by the source
Memory voltageDiffers	1.5 V	1.2 V
Product colourKnown for one	Black	Unknown — not stated by the source
Cooling typeKnown for one	Heatsink	Unknown — not stated by the source
Lead platingKnown for one	Gold	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.