Product comparison · 2 memory modules

Goodram GR1600S3V64L11/2G memory module vs Samsung M393B5673GB0-CH9Q8 memory module

Key differences

Component for
- GR1600S3V64L11/2G memory module:Laptop
- M393B5673GB0-CH9Q8 memory module:PC/Server
Memory form factor
- GR1600S3V64L11/2G memory module:204-pin SO-DIMM
- M393B5673GB0-CH9Q8 memory module:240-pin DIMM
CAS latency
- GR1600S3V64L11/2G memory module:11
- M393B5673GB0-CH9Q8 memory module:9
Memory clock speed
- GR1600S3V64L11/2G memory module:1600 MHz
- M393B5673GB0-CH9Q8 memory module:1333 MHz
Buffered memory type
- GR1600S3V64L11/2G memory module:Unregistered (unbuffered)
- M393B5673GB0-CH9Q8 memory module:Registered (buffered)
Memory voltage
- GR1600S3V64L11/2G memory module:1.35 V
- M393B5673GB0-CH9Q8 memory module:1.5 V
Module configuration
- GR1600S3V64L11/2G memory module:256M x 8
- M393B5673GB0-CH9Q8 memory module:256M X 72

Differences highlightedShow differences only

Comparison of GR1600S3V64L11/2G, M393B5673GB0-CH9Q8
15 specifications	A Goodram GR1600S3V64L11/2G memory module Model GR1600S3V64L11/2G View product	B Samsung M393B5673GB0-CH9Q8 memory module Model M393B5673GB0-CH9Q8 View product
Features7 differ
Component forDiffers	Laptop	PC/Server
Memory form factorDiffers	204-pin SO-DIMM	240-pin DIMM
CAS latencyDiffers	11	9
Memory clock speedDiffers	1600 MHz	1333 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Registered (buffered)
Memory rankingKnown for one	Unknown — not stated by the source	2
Memory voltageDiffers	1.35 V	1.5 V
Module configurationDiffers	256M x 8	256M X 72
ECCKnown for one	No	Unknown — not stated by the source
Operational conditionsidentical
Operating temperature (T-T)Known for one	Unknown — not stated by the source	0 - 85 °C
Weight & dimensionsidentical
HeightKnown for one	Unknown — not stated by the source	30 mm
WidthKnown for one	67.6 mm	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.