Product comparison · 2 memory modules

Goodram GR1600S3V64L11/2G memory module vs Samsung M393B5170DZ1-CH9 memory module

Key differences

Internal memory
- GR1600S3V64L11/2G memory module:2 GB
- M393B5170DZ1-CH9 memory module:4 GB
Memory layout (modules x size)
- GR1600S3V64L11/2G memory module:1 x 2 GB
- M393B5170DZ1-CH9 memory module:1 x 4 GB
Component for
- GR1600S3V64L11/2G memory module:Laptop
- M393B5170DZ1-CH9 memory module:PC/Server
Memory form factor
- GR1600S3V64L11/2G memory module:204-pin SO-DIMM
- M393B5170DZ1-CH9 memory module:240-pin DIMM
ECC
- GR1600S3V64L11/2G memory module:No
- M393B5170DZ1-CH9 memory module:Yes
CAS latency
- GR1600S3V64L11/2G memory module:11
- M393B5170DZ1-CH9 memory module:9
Memory clock speed
- GR1600S3V64L11/2G memory module:1600 MHz
- M393B5170DZ1-CH9 memory module:1333 MHz
Buffered memory type
- GR1600S3V64L11/2G memory module:Unregistered (unbuffered)
- M393B5170DZ1-CH9 memory module:Registered (buffered)

Differences highlightedShow differences only

Comparison of GR1600S3V64L11/2G, M393B5170DZ1-CH9
13 specifications	A Goodram GR1600S3V64L11/2G memory module Model GR1600S3V64L11/2G View product	B Samsung M393B5170DZ1-CH9 memory module Model M393B5170DZ1-CH9 View product
Features9 differ
Internal memoryDiffers	2 GB	4 GB
Memory layout (modules x size)Differs	1 x 2 GB	1 x 4 GB
Internal memory type	DDR3	DDR3
Component forDiffers	Laptop	PC/Server
Memory form factorDiffers	204-pin SO-DIMM	240-pin DIMM
ECCDiffers	No	Yes
CAS latencyDiffers	11	9
Memory clock speedDiffers	1600 MHz	1333 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Registered (buffered)
Memory voltageDiffers	1.35 V	1.5 V
Module configurationKnown for one	256M x 8	Unknown — not stated by the source
Memory rankingKnown for one	Unknown — not stated by the source	2
Weight & dimensionsidentical
WidthKnown for one	67.6 mm	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.