Product comparison · 2 memory modules

Goodram GR1600D3V64L11/8GDC memory module vs Samsung M470T2864FB3-CF7 memory module

Key differences

Internal memory
- GR1600D3V64L11/8GDC memory module:8 GB
- M470T2864FB3-CF7 memory module:1 GB
Memory layout (modules x size)
- GR1600D3V64L11/8GDC memory module:1 x 8 GB
- M470T2864FB3-CF7 memory module:1 x 1 GB
Internal memory type
- GR1600D3V64L11/8GDC memory module:DDR3
- M470T2864FB3-CF7 memory module:DDR2
Component for
- GR1600D3V64L11/8GDC memory module:PC/Server
- M470T2864FB3-CF7 memory module:Laptop
Memory form factor
- GR1600D3V64L11/8GDC memory module:240-pin DIMM
- M470T2864FB3-CF7 memory module:200-pin SO-DIMM
CAS latency
- GR1600D3V64L11/8GDC memory module:11
- M470T2864FB3-CF7 memory module:6
Memory clock speed
- GR1600D3V64L11/8GDC memory module:1600 MHz
- M470T2864FB3-CF7 memory module:800 MHz
Memory voltage
- GR1600D3V64L11/8GDC memory module:1.35 V
- M470T2864FB3-CF7 memory module:1.8 V

Differences highlightedShow differences only

Comparison of GR1600D3V64L11/8GDC, M470T2864FB3-CF7
12 specifications	A Goodram GR1600D3V64L11/8GDC memory module Model GR1600D3V64L11/8GDC View product	B Samsung M470T2864FB3-CF7 memory module Model M470T2864FB3-CF7 View product
Features8 differ
Internal memoryDiffers	8 GB	1 GB
Memory layout (modules x size)Differs	1 x 8 GB	1 x 1 GB
Internal memory typeDiffers	DDR3	DDR2
Component forDiffers	PC/Server	Laptop
Memory form factorDiffers	240-pin DIMM	200-pin SO-DIMM
ECCKnown for one	Unknown — not stated by the source	No
CAS latencyDiffers	11	6
Memory clock speedDiffers	1600 MHz	800 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)
Memory rankingKnown for one	Unknown — not stated by the source	2
Memory voltageDiffers	1.35 V	1.8 V
Memory channelsKnown for one	Dual-channel	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.