Product comparison · 2 memory modules

Goodram GR1600D3V64L11/8G memory module vs Samsung M393B1K70BH1-CH9 memory module

Key differences

ECC
- GR1600D3V64L11/8G memory module:No
- M393B1K70BH1-CH9 memory module:Yes
CAS latency
- GR1600D3V64L11/8G memory module:11
- M393B1K70BH1-CH9 memory module:9
Memory clock speed
- GR1600D3V64L11/8G memory module:1600 MHz
- M393B1K70BH1-CH9 memory module:1333 MHz
Buffered memory type
- GR1600D3V64L11/8G memory module:Unregistered (unbuffered)
- M393B1K70BH1-CH9 memory module:Registered (buffered)
Memory voltage
- GR1600D3V64L11/8G memory module:1.35 V
- M393B1K70BH1-CH9 memory module:1.5 V
Module configuration
- GR1600D3V64L11/8G memory module:512M x 8
- M393B1K70BH1-CH9 memory module:1024M x 72

Differences highlightedShow differences only

Comparison of GR1600D3V64L11/8G, M393B1K70BH1-CH9
16 specifications	A Goodram GR1600D3V64L11/8G memory module Model GR1600D3V64L11/8G View product	B Samsung M393B1K70BH1-CH9 memory module Model M393B1K70BH1-CH9 View product
Features6 differ
ECCDiffers	No	Yes
CAS latencyDiffers	11	9
Memory clock speedDiffers	1600 MHz	1333 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Registered (buffered)
Memory voltageDiffers	1.35 V	1.5 V
Module configurationDiffers	512M x 8	1024M x 72
Memory rankingKnown for one	Unknown — not stated by the source	2
Weight & dimensionsidentical
WidthKnown for one	133.3 mm	Unknown — not stated by the source
DepthKnown for one	1.27 mm	Unknown — not stated by the source
Operational conditionsidentical
Operating temperature (T-T)Known for one	Unknown — not stated by the source	0 - 85 °C

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.