Product comparison · 2 memory modules

Goodram GR1600D3V64L11/4G memory module vs Samsung 2GB DDR3 1066MHz

Key differences

Internal memory
- GR1600D3V64L11/4G memory module:4 GB
- 2GB DDR3 1066MHz:2 GB
Memory layout (modules x size)
- GR1600D3V64L11/4G memory module:1 x 4 GB
- 2GB DDR3 1066MHz:1 x 2 GB
ECC
- GR1600D3V64L11/4G memory module:No
- 2GB DDR3 1066MHz:Yes
CAS latency
- GR1600D3V64L11/4G memory module:11
- 2GB DDR3 1066MHz:7
Memory clock speed
- GR1600D3V64L11/4G memory module:1600 MHz
- 2GB DDR3 1066MHz:1066 MHz
Buffered memory type
- GR1600D3V64L11/4G memory module:Unregistered (unbuffered)
- 2GB DDR3 1066MHz:Registered (buffered)
Memory voltage
- GR1600D3V64L11/4G memory module:1.35 V
- 2GB DDR3 1066MHz:1.5 V
Module configuration
- GR1600D3V64L11/4G memory module:256M x 8
- 2GB DDR3 1066MHz:256M X 72

Differences highlightedShow differences only

Comparison of GR1600D3V64L11/4G, 2GB DDR3 1066MHz
19 specifications	A Goodram GR1600D3V64L11/4G memory module Model GR1600D3V64L11/4G View product	B Samsung 2GB DDR3 1066MHz View product
Features8 differ
Internal memoryDiffers	4 GB	2 GB
Memory layout (modules x size)Differs	1 x 4 GB	1 x 2 GB
ECCDiffers	No	Yes
CAS latencyDiffers	11	7
Memory clock speedDiffers	1600 MHz	1066 MHz
Buffered memory typeDiffers	Unregistered (unbuffered)	Registered (buffered)
Memory voltageDiffers	1.35 V	1.5 V
Module configurationDiffers	256M x 8	256M X 72
Row cycle timeKnown for one	Unknown — not stated by the source	7 ns
Refresh row cycle timeKnown for one	Unknown — not stated by the source	7 ns
Lead platingKnown for one	Gold	Unknown — not stated by the source
Operational conditionsidentical
Operating temperature (T-T)Known for one	Unknown — not stated by the source	0 - 85 °C
Sustainabilityidentical
Compliance certificatesKnown for one	Unknown — not stated by the source	RoHS
Weight & dimensions1 differ
DepthDiffers	1.27 mm	4 mm

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.