Product comparison · 2 memory modules

Goodram GR1333S364L9/8G memory module vs Samsung M471B5273EB0-CK0 memory module

Key differences

Internal memory
- GR1333S364L9/8G memory module:8 GB
- M471B5273EB0-CK0 memory module:4 GB
CAS latency
- GR1333S364L9/8G memory module:9
- M471B5273EB0-CK0 memory module:11
Memory clock speed
- GR1333S364L9/8G memory module:1333 MHz
- M471B5273EB0-CK0 memory module:1600 MHz
Memory voltage
- GR1333S364L9/8G memory module:1.5 V
- M471B5273EB0-CK0 memory module:1.35,1.5 V
Module configuration
- GR1333S364L9/8G memory module:512M x 8
- M471B5273EB0-CK0 memory module:256M x 8

Differences highlightedShow differences only

Comparison of GR1333S364L9/8G, M471B5273EB0-CK0
13 specifications	A Goodram GR1333S364L9/8G memory module Model GR1333S364L9/8G View product	B Samsung M471B5273EB0-CK0 memory module Model M471B5273EB0-CK0 View product
Features5 differ
Internal memoryDiffers	8 GB	4 GB
Memory layout (modules x size)	1 x 8 GB	1 x 8 GB
Internal memory type	DDR3	DDR3
Component for	Laptop	Laptop
Memory form factor	204-pin SO-DIMM	204-pin SO-DIMM
ECCKnown for one	No	Unknown — not stated by the source
CAS latencyDiffers	9	11
Memory clock speedDiffers	1333 MHz	1600 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Memory voltageDiffers	1.5 V	1.35,1.5 V
Module configurationDiffers	512M x 8	256M x 8
Memory rankingKnown for one	Unknown — not stated by the source	2
Weight & dimensionsidentical
WidthKnown for one	67.6 mm	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.