Product comparison · 2 memory modules

Goodram GR1333S364L9/4G memory module vs Samsung M471B5273EB0-CK0 memory module

9specifications compared
4differ
5identical
4known for one product only

Key differences

Memory layout (modules x size)
- GR1333S364L9/4G memory module:1 x 4 GB
- M471B5273EB0-CK0 memory module:1 x 8 GB
CAS latency
- GR1333S364L9/4G memory module:9
- M471B5273EB0-CK0 memory module:11
Memory clock speed
- GR1333S364L9/4G memory module:1333 MHz
- M471B5273EB0-CK0 memory module:1600 MHz
Memory voltage
- GR1333S364L9/4G memory module:1.5 V
- M471B5273EB0-CK0 memory module:1.35,1.5 V

Side by side

Differences highlightedShow differences only

Comparison of GR1333S364L9/4G, M471B5273EB0-CK0
13 specifications	A Goodram GR1333S364L9/4G memory module Model GR1333S364L9/4G View product	B Samsung M471B5273EB0-CK0 memory module Model M471B5273EB0-CK0 View product
Features4 differ
Memory layout (modules x size)Differs	1 x 4 GB	1 x 8 GB
ECCKnown for one	No	Unknown — not stated by the source
CAS latencyDiffers	9	11
Memory clock speedDiffers	1333 MHz	1600 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Memory voltageDiffers	1.5 V	1.35,1.5 V
Memory rankingKnown for one	Unknown — not stated by the source	2
Weight & dimensionsidentical
WidthKnown for one	67.6 mm	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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