Product comparison · 2 memory modules

Fujitsu MCX3CD621 memory module vs Samsung M378T6553EZS-CE6 memory module

Key differences

Internal memory
- MCX3CD621 memory module:32 GB
- M378T6553EZS-CE6 memory module:0.5 GB
Memory layout (modules x size)
- MCX3CD621 memory module:2 x 16 GB
- M378T6553EZS-CE6 memory module:1 x 0.5 GB
Internal memory type
- MCX3CD621 memory module:DDR4
- M378T6553EZS-CE6 memory module:DDR2
Memory form factor
- MCX3CD621 memory module:288-pin DIMM
- M378T6553EZS-CE6 memory module:240-pin DIMM
ECC
- MCX3CD621 memory module:Yes
- M378T6553EZS-CE6 memory module:No
Memory clock speed
- MCX3CD621 memory module:2400 MHz
- M378T6553EZS-CE6 memory module:667 MHz

Differences highlightedShow differences only

Comparison of MCX3CD621, M378T6553EZS-CE6
11 specifications	A Fujitsu MCX3CD621 memory module Model MCX3CD621 View product	B Samsung M378T6553EZS-CE6 memory module Model M378T6553EZS-CE6 View product
Features6 differ
Internal memoryDiffers	32 GB	0.5 GB
Memory layout (modules x size)Differs	2 x 16 GB	1 x 0.5 GB
Internal memory typeDiffers	DDR4	DDR2
Memory form factorDiffers	288-pin DIMM	240-pin DIMM
ECCDiffers	Yes	No
Memory clock speedDiffers	2400 MHz	667 MHz
Memory voltageKnown for one	1.2 V	Unknown — not stated by the source
Product colourKnown for one	Multicolour	Unknown — not stated by the source
CAS latencyKnown for one	Unknown — not stated by the source	5
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.