Product comparison · 2 memory modules

Fujitsu 4GB DDR3-1333MHz, ECC vs Samsung 8GB DDR3 1066MHz ECC Registered DIMM

8specifications compared
3differ
5identical
4known for one product only

Key differences

Internal memory
- 4GB DDR3-1333MHz, ECC:4 GB
- 8GB DDR3 1066MHz ECC Registered DIMM:8 GB
Memory layout (modules x size)
- 4GB DDR3-1333MHz, ECC:1 x 4 GB
- 8GB DDR3 1066MHz ECC Registered DIMM:4 x 2 GB
Memory clock speed
- 4GB DDR3-1333MHz, ECC:1333 MHz
- 8GB DDR3 1066MHz ECC Registered DIMM:1066 MHz

Side by side

Differences highlightedShow differences only

Comparison of 4GB DDR3-1333MHz, ECC, 8GB DDR3 1066MHz ECC Registered DIMM
12 specifications	A Fujitsu 4GB DDR3-1333MHz, ECC View product	B Samsung 8GB DDR3 1066MHz ECC Registered DIMM View product
Features3 differ
Internal memoryDiffers	4 GB	8 GB
Memory layout (modules x size)Differs	1 x 4 GB	4 x 2 GB
CAS latencyKnown for one	Unknown — not stated by the source	7
Memory clock speedDiffers	1333 MHz	1066 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Registered (buffered)
Memory voltageKnown for one	Unknown — not stated by the source	1.5 V
Other featuresidentical
Chips organisationKnown for one	Unknown — not stated by the source	1Gx72

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More memory module comparisons

All memory module comparisons