Product comparison · 2 memory modules

Fujitsu 4GB DDR3 1333 MHz PC3-10600 UB DIMM vs Samsung MV-3V2G3/US memory module

6specifications compared
3differ
3identical
8known for one product only

Key differences

Internal memory
- 4GB DDR3 1333 MHz PC3-10600 UB DIMM:4 GB
- MV-3V2G3/US memory module:2 GB
Memory layout (modules x size)
- 4GB DDR3 1333 MHz PC3-10600 UB DIMM:1 x 4 GB
- MV-3V2G3/US memory module:1 x 2 GB
Memory clock speed
- 4GB DDR3 1333 MHz PC3-10600 UB DIMM:1333 MHz
- MV-3V2G3/US memory module:1600 MHz

Side by side

Differences highlightedShow differences only

Comparison of 4GB DDR3 1333 MHz PC3-10600 UB DIMM, MV-3V2G3/US
14 specifications	A Fujitsu 4GB DDR3 1333 MHz PC3-10600 UB DIMM View product	B Samsung MV-3V2G3/US memory module Model MV-3V2G3/US View product
Features3 differ
Internal memoryDiffers	4 GB	2 GB
Memory layout (modules x size)Differs	1 x 4 GB	1 x 2 GB
Memory clock speedDiffers	1333 MHz	1600 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Component forKnown for one	Unknown — not stated by the source	PC/Server
CAS latencyKnown for one	Unknown — not stated by the source	11
Memory voltageKnown for one	Unknown — not stated by the source	1.35 V
Operational conditionsidentical
Operating temperature (T-T)Known for one	0 - 85 °C	Unknown — not stated by the source
Storage temperature (T-T)Known for one	-25 - 95 °C	Unknown — not stated by the source
Softwareidentical
Windows operating systems supportedKnown for one	Yes	Unknown — not stated by the source
Linux operating systems supportedKnown for one	Yes	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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