Product comparison · 2 memory modules

Fujitsu 34027364 memory module vs Samsung MV-3V2G3D/US memory module

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  • 6specifications compared
  • 2differ
  • 4identical
  • 5known for one product only

Key differences

  • Memory layout (modules x size)
    • 34027364 memory module:1 x 4 GB
    • MV-3V2G3D/US memory module:2 x 2 GB
  • Memory clock speed
    • 34027364 memory module:1066 MHz
    • MV-3V2G3D/US memory module:1600 MHz

Side by side

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Comparison of 34027364, MV-3V2G3D/US
11 specifications
B

Samsung

MV-3V2G3D/US memory module

Model MV-3V2G3D/US

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Features2 differ
Internal memory4 GB4 GB
Memory layout (modules x size)Differs1 x 4 GB2 x 2 GB
Internal memory typeDDR3DDR3
Component forPC/ServerPC/Server
Memory form factor240-pin DIMM240-pin DIMM
CAS latencyKnown for oneUnknown — not stated by the source11
Memory clock speedDiffers1066 MHz1600 MHz
Memory voltageKnown for oneUnknown — not stated by the source1.35 V
ECCKnown for oneYesUnknown — not stated by the source
Buffered memory typeKnown for oneRegistered (buffered)Unknown — not stated by the source
Packaging dataidentical
Package typeKnown for oneUnknown — not stated by the sourceDIMM

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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