Product comparison · 2 memory modules

Fujitsu 16GB DDR3 1866MHz vs Samsung M395T5160QZ4-CE65 memory module

Key differences

Internal memory
- 16GB DDR3 1866MHz:16 GB
- M395T5160QZ4-CE65 memory module:4 GB
Memory layout (modules x size)
- 16GB DDR3 1866MHz:1 x 16 GB
- M395T5160QZ4-CE65 memory module:1 x 4 GB
Internal memory type
- 16GB DDR3 1866MHz:DDR3
- M395T5160QZ4-CE65 memory module:DDR2
CAS latency
- 16GB DDR3 1866MHz:13
- M395T5160QZ4-CE65 memory module:5
Memory clock speed
- 16GB DDR3 1866MHz:1866 MHz
- M395T5160QZ4-CE65 memory module:667 MHz
Buffered memory type
- 16GB DDR3 1866MHz:Registered (buffered)
- M395T5160QZ4-CE65 memory module:Fully buffered
Memory voltage
- 16GB DDR3 1866MHz:1.5 V
- M395T5160QZ4-CE65 memory module:1.8 V

Differences highlightedShow differences only

Comparison of 16GB DDR3 1866MHz, M395T5160QZ4-CE65
11 specifications	A Fujitsu 16GB DDR3 1866MHz View product	B Samsung M395T5160QZ4-CE65 memory module Model M395T5160QZ4-CE65 View product
Features7 differ
Internal memoryDiffers	16 GB	4 GB
Memory layout (modules x size)Differs	1 x 16 GB	1 x 4 GB
Internal memory typeDiffers	DDR3	DDR2
Component for	PC/Server	PC/Server
Memory form factor	240-pin DIMM	240-pin DIMM
ECC	Yes	Yes
CAS latencyDiffers	13	5
Memory clock speedDiffers	1866 MHz	667 MHz
Buffered memory typeDiffers	Registered (buffered)	Fully buffered
Memory ranking	2	2
Memory voltageDiffers	1.5 V	1.8 V

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.