Product comparison · 2 memory modules

Buffalo AN333-1G memory module vs Samsung 1GB, DDR III SDRAM, 1333MHz, CL9

5specifications compared
3differ
2identical
6known for one product only

Key differences

Memory clock speed
- AN333-1G memory module:333 MHz
- 1GB, DDR III SDRAM, 1333MHz, CL9:1333 MHz
Memory voltage
- AN333-1G memory module:2.5 V
- 1GB, DDR III SDRAM, 1333MHz, CL9:1.5 V
Number of pins
- AN333-1G memory module:200
- 1GB, DDR III SDRAM, 1333MHz, CL9:240

Side by side

Differences highlightedShow differences only

Comparison of AN333-1G, 1GB, DDR III SDRAM, 1333MHz, CL9
11 specifications	A Buffalo AN333-1G memory module Model AN333-1G View product	B Samsung 1GB, DDR III SDRAM, 1333MHz, CL9 View product
Features2 differ
Internal memory	1 GB	1 GB
Memory layout (modules x size)Known for one	1 x 1 GB	Unknown — not stated by the source
ECC	No	No
CAS latencyKnown for one	2.5	Unknown — not stated by the source
Memory clock speedDiffers	333 MHz	1333 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Memory voltageDiffers	2.5 V	1.5 V
Internal memory typeKnown for one	Unknown — not stated by the source	DDR3
Memory form factorKnown for one	Unknown — not stated by the source	240-pin DIMM
Other features1 differ
Mac compatibilityKnown for one	Yes	Unknown — not stated by the source
Number of pinsDiffers	200	240

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More memory module comparisons

All memory module comparisons