Product comparison · 2 memory modules

Buffalo AD400-1GX2 memory module vs Samsung 1GB, DDR III SDRAM, 1333MHz, CL9

6specifications compared
5differ
1identical
5known for one product only

Key differences

Internal memory
- AD400-1GX2 memory module:2 GB
- 1GB, DDR III SDRAM, 1333MHz, CL9:1 GB
Internal memory type
- AD400-1GX2 memory module:DDR
- 1GB, DDR III SDRAM, 1333MHz, CL9:DDR3
Memory clock speed
- AD400-1GX2 memory module:400 MHz
- 1GB, DDR III SDRAM, 1333MHz, CL9:1333 MHz
Memory voltage
- AD400-1GX2 memory module:2.5 V
- 1GB, DDR III SDRAM, 1333MHz, CL9:1.5 V
Number of pins
- AD400-1GX2 memory module:184
- 1GB, DDR III SDRAM, 1333MHz, CL9:240

Side by side

Differences highlightedShow differences only

Comparison of AD400-1GX2, 1GB, DDR III SDRAM, 1333MHz, CL9
11 specifications	A Buffalo AD400-1GX2 memory module Model AD400-1GX2 View product	B Samsung 1GB, DDR III SDRAM, 1333MHz, CL9 View product
Features4 differ
Internal memoryDiffers	2 GB	1 GB
Memory layout (modules x size)Known for one	2 x 1 GB	Unknown — not stated by the source
Internal memory typeDiffers	DDR	DDR3
ECC	No	No
CAS latencyKnown for one	3	Unknown — not stated by the source
Memory clock speedDiffers	400 MHz	1333 MHz
Buffered memory typeKnown for one	Unregistered (unbuffered)	Unknown — not stated by the source
Memory voltageDiffers	2.5 V	1.5 V
Memory form factorKnown for one	Unknown — not stated by the source	240-pin DIMM
Other features1 differ
Mac compatibilityKnown for one	Yes	Unknown — not stated by the source
Number of pinsDiffers	184	240

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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