Product comparison · 2 memory modules

Buffalo A2U533-1G memory module vs Buffalo AN333-1G memory module

9specifications compared
4differ
5identical
2known for one product only

Key differences

CAS latency
- A2U533-1G memory module:4
- AN333-1G memory module:2.5
Memory clock speed
- A2U533-1G memory module:533 MHz
- AN333-1G memory module:333 MHz
Memory voltage
- A2U533-1G memory module:1.8 V
- AN333-1G memory module:2.5 V
Number of pins
- A2U533-1G memory module:240
- AN333-1G memory module:200

Side by side

Differences highlightedShow differences only

Comparison of A2U533-1G, AN333-1G
11 specifications	A Buffalo A2U533-1G memory module Model A2U533-1G View product	B Buffalo AN333-1G memory module Model AN333-1G View product
Features3 differ
Internal memory typeKnown for one	DDR2	Unknown — not stated by the source
Memory form factorKnown for one	240-pin DIMM	Unknown — not stated by the source
CAS latencyDiffers	4	2.5
Memory clock speedDiffers	533 MHz	333 MHz
Memory voltageDiffers	1.8 V	2.5 V
Other features1 differ
Number of pinsDiffers	240	200

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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