Product comparison · 2 memory modules

Buffalo A2N667-2GX2 memory module vs Buffalo AN333-1G memory module

9specifications compared
5differ
4identical
2known for one product only

Key differences

Internal memory
- A2N667-2GX2 memory module:4 GB
- AN333-1G memory module:1 GB
Memory layout (modules x size)
- A2N667-2GX2 memory module:2 x 2 GB
- AN333-1G memory module:1 x 1 GB
CAS latency
- A2N667-2GX2 memory module:5
- AN333-1G memory module:2.5
Memory clock speed
- A2N667-2GX2 memory module:667 MHz
- AN333-1G memory module:333 MHz
Memory voltage
- A2N667-2GX2 memory module:1.8 V
- AN333-1G memory module:2.5 V

Side by side

Differences highlightedShow differences only

Comparison of A2N667-2GX2, AN333-1G
11 specifications	A Buffalo A2N667-2GX2 memory module Model A2N667-2GX2 View product	B Buffalo AN333-1G memory module Model AN333-1G View product
Features5 differ
Internal memoryDiffers	4 GB	1 GB
Memory layout (modules x size)Differs	2 x 2 GB	1 x 1 GB
Internal memory typeKnown for one	DDR2	Unknown — not stated by the source
Memory form factorKnown for one	200-pin SO-DIMM	Unknown — not stated by the source
ECC	No	No
CAS latencyDiffers	5	2.5
Memory clock speedDiffers	667 MHz	333 MHz
Buffered memory type	Unregistered (unbuffered)	Unregistered (unbuffered)
Memory voltageDiffers	1.8 V	2.5 V
Other featuresidentical
Mac compatibility	Yes	Yes
Number of pins	200	200

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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