Product comparison · 2 memory modules

Buffalo A2F667-E4GX2 memory module vs Samsung 1GB, DDR III SDRAM, 1066MHz, CL7

5specifications compared
4differ
1identical
4known for one product only

Key differences

Internal memory
- A2F667-E4GX2 memory module:8 GB
- 1GB, DDR III SDRAM, 1066MHz, CL7:1 GB
Internal memory type
- A2F667-E4GX2 memory module:DDR2
- 1GB, DDR III SDRAM, 1066MHz, CL7:DDR3
Memory clock speed
- A2F667-E4GX2 memory module:667 MHz
- 1GB, DDR III SDRAM, 1066MHz, CL7:1066 MHz
Memory voltage
- A2F667-E4GX2 memory module:1.8 V
- 1GB, DDR III SDRAM, 1066MHz, CL7:1.5 V

Side by side

Differences highlightedShow differences only

Comparison of A2F667-E4GX2, 1GB, DDR III SDRAM, 1066MHz, CL7
9 specifications	A Buffalo A2F667-E4GX2 memory module Model A2F667-E4GX2 View product	B Samsung 1GB, DDR III SDRAM, 1066MHz, CL7 View product
Features4 differ
Internal memoryDiffers	8 GB	1 GB
Memory layout (modules x size)Known for one	2 x 4 GB	Unknown — not stated by the source
Internal memory typeDiffers	DDR2	DDR3
Memory form factor	240-pin DIMM	240-pin DIMM
CAS latencyKnown for one	5	Unknown — not stated by the source
Memory clock speedDiffers	667 MHz	1066 MHz
Memory voltageDiffers	1.8 V	1.5 V
ECCKnown for one	Unknown — not stated by the source	No
Other featuresidentical
Number of pinsKnown for one	Unknown — not stated by the source	240

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

More memory module comparisons

All memory module comparisons