Buffalo A2F667-E4GX2 memory module vs Buffalo A2F800-E4GX2 memory module

Comparison of A2F667-E4GX2, A2F800-E4GX2

11 specifications	A Buffalo A2F667-E4GX2 memory module Model A2F667-E4GX2 View product	B Buffalo A2F800-E4GX2 memory module Model A2F800-E4GX2 View product
Features1 differ
Internal memory	8 GB	8 GB
Memory layout (modules x size)	2 x 4 GB	2 x 4 GB
Internal memory type	DDR2	DDR2
Memory form factor	240-pin DIMM	240-pin DIMM
ECCKnown for one	—Unknown — not stated by the source	Yes
CAS latency	5	5
Memory clock speedDiffers	667 MHz	800 MHz
Buffered memory typeKnown for one	—Unknown — not stated by the source	Unregistered (unbuffered)
Memory voltage	1.8 V	1.8 V
Other featuresidentical
Mac compatibilityKnown for one	—Unknown — not stated by the source	Yes
Number of pinsKnown for one	—Unknown — not stated by the source	240

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.