Product comparison · 2 memory modules

Buffalo A2F667-E1GX2 memory module vs Buffalo AD400-512M memory module

5specifications compared
5differ
0identical
6known for one product only

Key differences

Internal memory
- A2F667-E1GX2 memory module:2 GB
- AD400-512M memory module:0.5 GB
Memory layout (modules x size)
- A2F667-E1GX2 memory module:2 x 1 GB
- AD400-512M memory module:1 x 0.5 GB
CAS latency
- A2F667-E1GX2 memory module:5
- AD400-512M memory module:3
Memory clock speed
- A2F667-E1GX2 memory module:667 MHz
- AD400-512M memory module:400 MHz
Memory voltage
- A2F667-E1GX2 memory module:1.8 V
- AD400-512M memory module:2.5 V

Side by side

Differences highlightedShow differences only

Comparison of A2F667-E1GX2, AD400-512M
11 specifications	A Buffalo A2F667-E1GX2 memory module Model A2F667-E1GX2 View product	B Buffalo AD400-512M memory module Model AD400-512M View product
Features5 differ
Internal memoryDiffers	2 GB	0.5 GB
Memory layout (modules x size)Differs	2 x 1 GB	1 x 0.5 GB
ECCKnown for one	Unknown — not stated by the source	No
CAS latencyDiffers	5	3
Memory clock speedDiffers	667 MHz	400 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)
Memory voltageDiffers	1.8 V	2.5 V
Internal memory typeKnown for one	DDR2	Unknown — not stated by the source
Memory form factorKnown for one	240-pin DIMM	Unknown — not stated by the source
Other featuresidentical
Mac compatibilityKnown for one	Unknown — not stated by the source	Yes
Number of pinsKnown for one	Unknown — not stated by the source	184

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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