Product comparison · 2 memory modules

Buffalo A2F667-E1GX2 memory module vs Buffalo A2N667-1G memory module

6specifications compared
2differ
4identical
4known for one product only

Key differences

Internal memory
- A2F667-E1GX2 memory module:2 GB
- A2N667-1G memory module:1 GB
Memory form factor
- A2F667-E1GX2 memory module:240-pin DIMM
- A2N667-1G memory module:200-pin SO-DIMM

Side by side

Differences highlightedShow differences only

Comparison of A2F667-E1GX2, A2N667-1G
10 specifications	A Buffalo A2F667-E1GX2 memory module Model A2F667-E1GX2 View product	B Buffalo A2N667-1G memory module Model A2N667-1G View product
Features2 differ
Internal memoryDiffers	2 GB	1 GB
Memory layout (modules x size)	2 x 1 GB	2 x 1 GB
Internal memory type	DDR2	DDR2
Memory form factorDiffers	240-pin DIMM	200-pin SO-DIMM
ECCKnown for one	Unknown — not stated by the source	No
Memory clock speed	667 MHz	667 MHz
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)
Memory voltage	1.8 V	1.8 V
CAS latencyKnown for one	5	Unknown — not stated by the source
Other featuresidentical
Number of pinsKnown for one	Unknown — not stated by the source	204

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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