Product comparison · 2 memory modules

Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin vs Samsung RAM DDR2 2GB, PC667

4specifications compared
2differ
2identical
5known for one product only

Key differences

Internal memory
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:0.5 GB
- RAM DDR2 2GB, PC667:2 GB
Memory clock speed
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:800 MHz
- RAM DDR2 2GB, PC667:667 MHz

Side by side

Differences highlightedShow differences only

Comparison of 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin, RAM DDR2 2GB, PC667
9 specifications	A Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin View product	B Samsung RAM DDR2 2GB, PC667 View product
Features2 differ
Internal memoryDiffers	0.5 GB	2 GB
Memory layout (modules x size)Known for one	Unknown — not stated by the source	1 x 2 GB
Internal memory type	DDR2	DDR2
Memory form factor	240-pin DIMM	240-pin DIMM
Memory clock speedDiffers	800 MHz	667 MHz
Memory busKnown for one	Unknown — not stated by the source	64 bit
Buffered memory typeKnown for one	Unknown — not stated by the source	Unregistered (unbuffered)
CAS latencyKnown for one	5	Unknown — not stated by the source
Memory voltageKnown for one	1.8 V	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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