Product comparison · 2 memory modules

Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin vs Samsung 2GB RAM DDR2 PC667 ECC

Key differences

Internal memory
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:0.5 GB
- 2GB RAM DDR2 PC667 ECC:2 GB
Memory clock speed
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:800 MHz
- 2GB RAM DDR2 PC667 ECC:667 MHz

Differences highlightedShow differences only

Comparison of 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin, 2GB RAM DDR2 PC667 ECC
7 specifications	A Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin View product	B Samsung 2GB RAM DDR2 PC667 ECC View product
Features2 differ
Internal memoryDiffers	0.5 GB	2 GB
Internal memory type	DDR2	DDR2
Memory form factor	240-pin DIMM	240-pin DIMM
CAS latencyKnown for one	5	Unknown — not stated by the source
Memory clock speedDiffers	800 MHz	667 MHz
Memory voltage	1.8 V	1.8 V
ECCKnown for one	Unknown — not stated by the source	Yes

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.