Product comparison · 2 memory modules

Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin vs Samsung 256MB PC2-4200 DDR RAM

4specifications compared
3differ
1identical
4known for one product only

Key differences

Internal memory
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:0.5 GB
- 256MB PC2-4200 DDR RAM:0.25 GB
Memory form factor
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:240-pin DIMM
- 256MB PC2-4200 DDR RAM:200-pin SO-DIMM
Memory clock speed
- 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin:800 MHz
- 256MB PC2-4200 DDR RAM:533 MHz

Side by side

Differences highlightedShow differences only

Comparison of 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin, 256MB PC2-4200 DDR RAM
8 specifications	A Buffalo 800MHz, PC2-6400 Unbuffered x64 Non-ECC, 240 Pin View product	B Samsung 256MB PC2-4200 DDR RAM View product
Features3 differ
Internal memoryDiffers	0.5 GB	0.25 GB
Internal memory type	DDR2	DDR2
Memory form factorDiffers	240-pin DIMM	200-pin SO-DIMM
CAS latencyKnown for one	5	Unknown — not stated by the source
Memory clock speedDiffers	800 MHz	533 MHz
Memory voltageKnown for one	1.8 V	Unknown — not stated by the source
Other featuresidentical
Number of pinsKnown for one	Unknown — not stated by the source	200
Memory technologyKnown for one	Unknown — not stated by the source	PC2-4200

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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