Product comparison · 2 memory cards

Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300 vs Samsung MB-MG32DA 32 GB MicroSDHC Class 10

5specifications compared
4differ
1identical
14known for one product only

Key differences

The Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300 has 480 GB more capacity than the Samsung MB-MG32DA 32 GB MicroSDHC Class 10 (512 GB vs 32 GB). The Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300 has 3,510 MB/s more read speed than the Samsung MB-MG32DA 32 GB MicroSDHC Class 10 (3600 MB/s vs 90 MB/s). The Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300 has 2,420 MB/s more write speed than the Samsung MB-MG32DA 32 GB MicroSDHC Class 10 (2500 MB/s vs 80 MB/s). Operating temperature (T-T): -12 - 72 °C on the Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300, -25 - 85 °C on the Samsung MB-MG32DA 32 GB MicroSDHC Class 10.

Capacity
- 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300:512 GB
- MB-MG32DA 32 GB MicroSDHC Class 10:32 GB
Read speed
- 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300:3600 MB/s
- MB-MG32DA 32 GB MicroSDHC Class 10:90 MB/s
Write speed
- 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300:2500 MB/s
- MB-MG32DA 32 GB MicroSDHC Class 10:80 MB/s
Operating temperature (T-T)
- 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300:-12 - 72 °C
- MB-MG32DA 32 GB MicroSDHC Class 10:-25 - 85 °C

Side by side

Differences highlightedShow differences only

Comparison of INCFE512G3600/S900G4.0, MB-MG32DA
19 specifications	A Integral 512GB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3600 W-2500 MBS SUSTAINED WRITE 900MBS STUDIO GRADE -12C ~ 72C TBW 300 Model INCFE512G3600/S900G4.0 View product	B Samsung MB-MG32DA 32 GB MicroSDHC Class 10 Model MB-MG32DA View product
Memory3 differ
CapacityDiffers	512 GB	32 GB
Flash card typeKnown for one	Unknown — not stated by the source	MicroSDHC
Flash memory classKnown for one	Unknown — not stated by the source	Class 10
Read speedDiffers	3600 MB/s	90 MB/s
Write speedDiffers	2500 MB/s	80 MB/s
Poweridentical
Memory voltageKnown for one	Unknown — not stated by the source	2.7,3.3,3.6 V
Operational conditions1 differ
Operating temperature (T-T)Differs	-12 - 72 °C	-25 - 85 °C
Storage temperature (T-T)	-40 - 85 °C	-40 - 85 °C
Weight & dimensionsidentical
WidthKnown for one	Unknown — not stated by the source	15 mm
DepthKnown for one	Unknown — not stated by the source	1 mm
HeightKnown for one	Unknown — not stated by the source	10.9 mm
WeightKnown for one	Unknown — not stated by the source	0.48 g
Packaging dataidentical
Quantity per packKnown for one	Unknown — not stated by the source	1 pc(s)
Package widthKnown for one	92 mm	Unknown — not stated by the source
Package depthKnown for one	138 mm	Unknown — not stated by the source
Package heightKnown for one	9 mm	Unknown — not stated by the source
Package weightKnown for one	22 g	Unknown — not stated by the source
Sustainabilityidentical
Sustainability complianceKnown for one	Yes	Unknown — not stated by the source
Other featuresidentical
Compliance certificatesKnown for one	RoHS, UKCA	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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