Product comparison · 2 memory cards

Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200 vs Samsung MB-MC256SA 256 GB MicroSDXC UHS-I

13specifications compared
11differ
2identical
18known for one product only

Key differences

The Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200 has 3,540 MB/s more read speed than the Samsung MB-MC256SA 256 GB MicroSDXC UHS-I (3700 MB/s vs 160 MB/s). The Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200 has 1,490,000 h more mean time between failures (MTBF) than the Samsung MB-MC256SA 256 GB MicroSDXC UHS-I (1500000 h vs 10000 h). The Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200 has 14.6 mm more width than the Samsung MB-MC256SA 256 GB MicroSDXC UHS-I (29.6 mm vs 15 mm). Capacity: 2 TB on the Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200, 256 GB on the Samsung MB-MC256SA 256 GB MicroSDXC UHS-I. Flash card type: CFexpress Type B on the Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200, MicroSDXC on the Samsung MB-MC256SA 256 GB MicroSDXC UHS-I.

Capacity
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:2 TB
- MB-MC256SA 256 GB MicroSDXC UHS-I:256 GB
Flash card type
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:CFexpress Type B
- MB-MC256SA 256 GB MicroSDXC UHS-I:MicroSDXC
Read speed
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:3700 MB/s
- MB-MC256SA 256 GB MicroSDXC UHS-I:160 MB/s
Mean time between failures (MTBF)
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:1500000 h
- MB-MC256SA 256 GB MicroSDXC UHS-I:10000 h
Operating temperature (T-T)
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:-12 - 72 °C
- MB-MC256SA 256 GB MicroSDXC UHS-I:-25 - 85 °C
Width
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:29.6 mm
- MB-MC256SA 256 GB MicroSDXC UHS-I:15 mm
Depth
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:3.8 mm
- MB-MC256SA 256 GB MicroSDXC UHS-I:1 mm
Height
- 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200:38.5 mm
- MB-MC256SA 256 GB MicroSDXC UHS-I:11 mm

Side by side

Differences highlightedShow differences only

Comparison of INCFE2TB3700/S1600G4.0, MB-MC256SA
31 specifications	A Integral 2TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 1200 Model INCFE2TB3700/S1600G4.0 View product	B Samsung MB-MC256SA 256 GB MicroSDXC UHS-I Model MB-MC256SA View product
Memory3 differ
CapacityDiffers	2 TB	256 GB
Flash card typeDiffers	CFexpress Type B	MicroSDXC
Read speedDiffers	3700 MB/s	160 MB/s
Internal memory typeKnown for one	Unknown — not stated by the source	UHS-I
UHS Speed ClassKnown for one	Unknown — not stated by the source	Class 3 (U3)
Application performance classKnown for one	Unknown — not stated by the source	A2
Video Speed ClassKnown for one	Unknown — not stated by the source	V30
Write speedKnown for one	3100 MB/s	Unknown — not stated by the source
X-speed ratingKnown for one	24667	Unknown — not stated by the source
Features2 differ
Product colourKnown for one	Unknown — not stated by the source	White
Protection featuresDiffers	Shockproof, Temperature proof, Waterproof, X-ray proof	Drop proof, Magnet proof, Temperature proof, Water repellent, X-ray proof
Mean time between failures (MTBF)Differs	1500000 h	10000 h
EnduranceKnown for one	Unknown — not stated by the source	10000 cycles per logical sector
Poweridentical
Memory voltageKnown for one	Unknown — not stated by the source	2.7,3.6 V
Operational conditions1 differ
Operating temperature (T-T)Differs	-12 - 72 °C	-25 - 85 °C
Weight & dimensions4 differ
WidthDiffers	29.6 mm	15 mm
DepthDiffers	3.8 mm	1 mm
HeightDiffers	38.5 mm	11 mm
WeightDiffers	7.5 g	25 g
Packaging dataidentical
Package widthKnown for one	30 mm	Unknown — not stated by the source
Package depthKnown for one	39 mm	Unknown — not stated by the source
Package heightKnown for one	4 mm	Unknown — not stated by the source
Package weightKnown for one	22 g	Unknown — not stated by the source
Package typeKnown for one	Blister	Unknown — not stated by the source
Packaging contentidentical
Memory adapter includedKnown for one	Unknown — not stated by the source	SD
Other features1 differ
Compatible productsKnown for one	Unknown — not stated by the source	Mobile phone, Smartphone, Tablet, etc
Compliance certificatesDiffers	RoHS, UKCA	Federal Communications Commission (FCC), CE, VCCI, RCM, UKCA
VoltageKnown for one	Unknown — not stated by the source	2.7~3.6V
Sustainabilityidentical
Sustainability complianceKnown for one	Yes	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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