Product comparison · 2 memory cards

Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600 vs Samsung MB-MC64S 64 GB MicroSDXC UHS-I

12specifications compared
10differ
2identical
19known for one product only

Key differences

The Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600 has 3,540 MB/s more read speed than the Samsung MB-MC64S 64 GB MicroSDXC UHS-I (3700 MB/s vs 160 MB/s). The Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600 has 14.6 mm more width than the Samsung MB-MC64S 64 GB MicroSDXC UHS-I (29.6 mm vs 15 mm). The Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600 has 2.8 mm more depth than the Samsung MB-MC64S 64 GB MicroSDXC UHS-I (3.8 mm vs 1 mm). Capacity: 1 TB on the Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600, 64 GB on the Samsung MB-MC64S 64 GB MicroSDXC UHS-I. Flash card type: CFexpress Type B on the Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600, MicroSDXC on the Samsung MB-MC64S 64 GB MicroSDXC UHS-I.

Capacity
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:1 TB
- MB-MC64S 64 GB MicroSDXC UHS-I:64 GB
Flash card type
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:CFexpress Type B
- MB-MC64S 64 GB MicroSDXC UHS-I:MicroSDXC
Read speed
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:3700 MB/s
- MB-MC64S 64 GB MicroSDXC UHS-I:160 MB/s
Operating temperature (T-T)
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:-12 - 72 °C
- MB-MC64S 64 GB MicroSDXC UHS-I:-25 - 85 °C
Width
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:29.6 mm
- MB-MC64S 64 GB MicroSDXC UHS-I:15 mm
Depth
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:3.8 mm
- MB-MC64S 64 GB MicroSDXC UHS-I:1 mm
Height
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:38.5 mm
- MB-MC64S 64 GB MicroSDXC UHS-I:11 mm
Weight
- 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600:7.5 g
- MB-MC64S 64 GB MicroSDXC UHS-I:25 g

Side by side

Differences highlightedShow differences only

Comparison of INCFE1TB3700/S1600G4.0, MB-MC64S
31 specifications	A Integral 1TB CFEXPRESS MEMORY CARD 4.0 TYPE B UP TO R-3700 W-3100 MBS SUSTAINED WRITE 1600MBS STUDIO GRADE -12C ~ 72C TBW 600 Model INCFE1TB3700/S1600G4.0 View product	B Samsung MB-MC64S 64 GB MicroSDXC UHS-I Model MB-MC64S View product
Memory3 differ
CapacityDiffers	1 TB	64 GB
Flash card typeDiffers	CFexpress Type B	MicroSDXC
Read speedDiffers	3700 MB/s	160 MB/s
Internal memory typeKnown for one	Unknown — not stated by the source	UHS-I
UHS Speed ClassKnown for one	Unknown — not stated by the source	Class 1 (U1)
Application performance classKnown for one	Unknown — not stated by the source	A1
Video Speed ClassKnown for one	Unknown — not stated by the source	V10
Write speedKnown for one	3100 MB/s	Unknown — not stated by the source
X-speed ratingKnown for one	24667	Unknown — not stated by the source
Features1 differ
Product colourKnown for one	Unknown — not stated by the source	White
Protection featuresDiffers	Shockproof, Temperature proof, Waterproof, X-ray proof	Drop resistant, Magnet proof, Temperature proof, Waterproof, X-ray proof
Mean time between failures (MTBF)Known for one	Unknown — not stated by the source	10000 h
EnduranceKnown for one	Unknown — not stated by the source	10000 cycles per logical sector
Poweridentical
Memory voltageKnown for one	Unknown — not stated by the source	2.7,3.6 V
Operational conditions1 differ
Operating temperature (T-T)Differs	-12 - 72 °C	-25 - 85 °C
Storage temperature (T-T)	-40 - 85 °C	-40 - 85 °C
Weight & dimensions4 differ
WidthDiffers	29.6 mm	15 mm
DepthDiffers	3.8 mm	1 mm
HeightDiffers	38.5 mm	11 mm
WeightDiffers	7.5 g	25 g
Packaging dataidentical
Quantity per pack	1 pc(s)	1 pc(s)
Package widthKnown for one	30 mm	Unknown — not stated by the source
Package depthKnown for one	39 mm	Unknown — not stated by the source
Package heightKnown for one	4 mm	Unknown — not stated by the source
Package weightKnown for one	22 g	Unknown — not stated by the source
Package typeKnown for one	Blister	Unknown — not stated by the source
Packaging contentidentical
Memory adapter includedKnown for one	Unknown — not stated by the source	SD
Other features1 differ
Compatible productsKnown for one	Unknown — not stated by the source	Mobile phone, Smartphone, Tablet, etc
Compliance certificatesDiffers	RoHS, UKCA	Federal Communications Commission (FCC), CE, VCCI, RCM, UKCA
VoltageKnown for one	Unknown — not stated by the source	2.7~3.6V
Sustainabilityidentical
Sustainability complianceKnown for one	Yes	Unknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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