Product comparison · 2 internal solid state drives

Lenovo 4XB7A13637 internal solid state drive vs Lenovo ThinkSystem SS530

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  • 16specifications compared
  • 10differ
  • 6identical
  • 15known for one product only

Key differences

The Lenovo ThinkSystem SS530 has 143,500 IOPS more random read (4KB) than the Lenovo 4XB7A13637 internal solid state drive (239500 IOPS vs 96000 IOPS). The Lenovo ThinkSystem SS530 has 128,300 IOPS more random write (4KB) than the Lenovo 4XB7A13637 internal solid state drive (170300 IOPS vs 42000 IOPS). The Lenovo ThinkSystem SS530 has 60 µs more read latency than the Lenovo 4XB7A13637 internal solid state drive (96 µs vs 36 µs). SSD capacity: 3.84 TB on the Lenovo 4XB7A13637 internal solid state drive, 800 GB on the Lenovo ThinkSystem SS530. Interface: Serial ATA III on the Lenovo 4XB7A13637 internal solid state drive, SAS on the Lenovo ThinkSystem SS530.

  • SSD capacity
    • 4XB7A13637 internal solid state drive:3.84 TB
    • ThinkSystem SS530:800 GB
  • Interface
    • 4XB7A13637 internal solid state drive:Serial ATA III
    • ThinkSystem SS530:SAS
  • Random read (4KB)
    • 4XB7A13637 internal solid state drive:96000 IOPS
    • ThinkSystem SS530:239500 IOPS
  • Random write (4KB)
    • 4XB7A13637 internal solid state drive:42000 IOPS
    • ThinkSystem SS530:170300 IOPS
  • Read latency
    • 4XB7A13637 internal solid state drive:36 µs
    • ThinkSystem SS530:96 µs
  • Write latency
    • 4XB7A13637 internal solid state drive:37 µs
    • ThinkSystem SS530:26 µs
  • Mean time between failures (MTBF)
    • 4XB7A13637 internal solid state drive:2000000 h
    • ThinkSystem SS530:2500000 h
  • Height
    • 4XB7A13637 internal solid state drive:7 mm
    • ThinkSystem SS530:15 mm

Side by side

Differences highlightedShow differences only (on)
Comparison of 4XB7A13637, ThinkSystem SS530
31 specifications
Features7 differ
SSD capacityDiffers3.84 TB800 GB
InterfaceDiffersSerial ATA IIISAS
NVMeKnown for oneUnknown — not stated by the sourceNo
Data transfer rateKnown for oneUnknown — not stated by the source12 Gbit/s
Read speedKnown for oneUnknown — not stated by the source1070 MB/s
Write speedKnown for oneUnknown — not stated by the source1050 MB/s
Random read (4KB)Differs96000 IOPS239500 IOPS
Random write (4KB)Differs42000 IOPS170300 IOPS
Read latencyDiffers36 µs96 µs
Write latencyDiffers37 µs26 µs
Hot-swapKnown for oneUnknown — not stated by the sourceYes
Mean time between failures (MTBF)Differs2000000 h2500000 h
Memory typeKnown for oneTLC 3D NANDUnknown — not stated by the source
S.M.A.R.T. supportKnown for oneYesUnknown — not stated by the source
CertificationKnown for oneFCC Title 47, Part 15B, Class B CA/CSA-CEI/IEC CISPR 22:02 EN 55024: 1998 EN 55022: 2006 EN-60950-1 2nd Edition UL/CSA EN-60950-1 2nd Edition Low Voltage Directive 2006/95/EC C-Tick: AS/NZS3584 BSMI: CNS 13438 KCC Article 11.1 RoHS DIRECTIVE 2011/65/EU WEEE Directive 2002/96/ECUnknown — not stated by the source
Poweridentical
Power consumption (average)Known for oneUnknown — not stated by the source9 W
Power consumption (max)Known for one3.7 WUnknown — not stated by the source
Weight & dimensions2 differ
HeightDiffers7 mm15 mm
WeightDiffers63 g175 g
Operational conditions1 differ
Operating temperature (T-T)Differs0 - 70 °C0 - 75 °C
Storage temperature (T-T)Known for oneUnknown — not stated by the source-40 - 85 °C
Operating vibrationKnown for oneUnknown — not stated by the source3.1 G
Operating shockKnown for oneUnknown — not stated by the source1500 G
Maximum operating altitudeKnown for one3050 mUnknown — not stated by the source
Other featuresidentical
Compatible productsKnown for oneThinkSystemUnknown — not stated by the source

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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