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Product comparison · 2 internal solid state drives

Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0CW and K01TBM2SP0-25G vs Origin Storage PBlaze6 6531 Series

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  • 7specifications compared
  • 4differ
  • 3identical
  • 33known for one product only

Key differences

The Origin Storage PBlaze6 6531 Series has 2.2 TB more SSD capacity than the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0CW and K01TBM2SP0-25G (3.2 TB vs 1 TB). Only the Origin Storage PBlaze6 6531 Series has hardware encryption. SSD form factor: M.2 on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0CW and K01TBM2SP0-25G, U.2 on the Origin Storage PBlaze6 6531 Series. Component for: PC/Notebook/Game console on the Integral 1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0CW and K01TBM2SP0-25G, Server on the Origin Storage PBlaze6 6531 Series.

  • SSD capacity
    • 1 TB
    • 3.2 TB
  • SSD form factor
    • M.2
    • U.2
  • Component for
    • PC/Notebook/Game console
    • Server
  • Hardware encryption
    • No
    • Yes

Side by side

Differences highlightedShow differences only
40 specifications
A

Integral

1 TB (1024 GB) KLEVV CRAS C925G M.2 2280 PCIE GEN 4×4 NVME 2.0 SSD WITH HEATSINK for SAMSUNG MZ-V9P1T0CW and K01TBM2SP0-25G

Model MZ-V9P1T0CW-IN

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B

Origin Storage

PBlaze6 6531 SeriesView product
Features4 differ
SSD capacityDiffers1 TB3.2 TB
SSD form factorDiffersM.2U.2
Component forDiffersPC/Notebook/Game consoleServer
Hardware encryptionDiffersNoYes
Read speedKnown for one7400 MB/s
Write speedKnown for one6300 MB/s
Random read (4KB)Known for one670000 IOPS
Random write (4KB)Known for one980000 IOPS
Controller typeKnown for oneMaxio MAP1602
S.M.A.R.T. supportKnown for oneYes
Protection featuresKnown for oneShock resistant
TBW ratingKnown for one1200
CertificationKnown for oneCE, UKCA, FCC
Memory typeKnown for one3D TLC
Target workloadKnown for oneRead Intensive (RI)
Sequential read speed (ATTO)Known for one6800 MB/s
Sequential write speed (ATTO)Known for one4800 MB/s
Drive writes per day (DWPD)Known for one1
Mean time between failures (MTBF)Known for one2000000 h
Poweridentical
Operating voltageKnown for one3.3 V
Power consumption (read)Known for one5 W
Power consumption (write)Known for one5 W
Weight & dimensionsidentical
WidthKnown for one22 mm
DepthKnown for one2.8 mm
HeightKnown for one80 mm
WeightKnown for one9 g
Packaging dataidentical
Package widthKnown for one97 mm
Package depthKnown for one16.5 mm
Package heightKnown for one123 mm
Package weightKnown for one15 g
Operational conditionsidentical
Storage temperature (T-T)Known for one-40 - 85 °C
Operating relative humidity (H-H)Known for one5 - 95%
Maximum operating temperatureKnown for one70 °C
Minimum operating temperatureKnown for one0 °C
Other featuresidentical
Compliance certificatesKnown for oneRoHS, REACH
Logistics dataidentical
Country of originKnown for oneChina
Quantity per packKnown for one1 pc(s)

A dash means the value is not stated by the source. Unknown values are never counted for or against a product, and there is no overall score.

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